Inventor · disambiguated record

Ching-Wei Tsai

Also filed as: TSAI CHING-WEI

273 granted patents·80 pending applications·2,553 citations·filing 2002–2025

99Inventor score

Technology areasH10D H10P H10W H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD321 TAIWAN SEMICONDUCTOR MFG17 MACRONIX INT CO LTD2 PERSONAL GENOMICS INC2 UNIV NAT CENTRAL2

Top patents by PatentIndex Score

353 records

0199US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
0299US11450751B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·8 cites·20 claims
0399US11158634B1Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·11 cites·20 claims
0499US10157799B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·135 cites·20 claims
0599US9881993B2Method of forming semiconductor structure with horizontal gate all around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 30, 2018·143 cites·19 claims
0699US9818872B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·166 cites·18 claims
0799US9608116B2FINFETs with wrap-around silicide and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·1.3k cites·20 claims
0898US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
0998US11664374B2Backside interconnect structures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·7 cites·20 claims
1098US11387237B2Semiconductor component having a fin and an epitaxial contact structure over an epitaxial layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
1198US11342326B2Self-aligned etch in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·6 cites·20 claims
1298US11251308B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·5 cites·20 claims
1398US11227917B1Nano-sheet-based devices with asymmetric source and drain configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·9 cites·20 claims
1498US10211307B2Methods of manufacturing inner spacers in a gate-all-around (GAA) FET through multi-layer spacer replacementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·22 cites·20 claims
1598US9991262B1Semiconductor device on hybrid substrate and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 5, 2018·24 cites·20 claims
1698US9935199B2FinFET with source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·27 cites·20 claims
1798US9559184B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·24 cites·20 claims
1897US12033899B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·2 cites·20 claims
1997US11942548B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·3 cites·20 claims
2097US11862561B2Semiconductor devices with backside routing and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 2, 2024·4 cites·20 claims
2197US11764154B2Power rail and signal line arrangement in integrated circuits having stacked transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·3 cites·20 claims
2297US11735482B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·2 cites·20 claims
2397US11588018B2Semiconductor device structure with nanostructure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·20 claims
2497US11532744B2Gate cut structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·4 cites·20 claims
2597US11450600B2Semiconductor devices including decoupling capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
2697US11031292B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·16 cites·20 claims
2797US10164069B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·13 cites·20 claims
2897US9911824B2Semiconductor structure with multi spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·20 cites·20 claims
2997US9773705B2FinFET channel on oxide structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·12 cites·20 claims
3097US9461110B1FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·18 cites·20 claims
3196US12170231B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·2 cites·20 claims
3296US12080713B2Self-aligned etch in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·2 cites·20 claims
3396US11735587B2Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
3496US11664454B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·2 cites·20 claims
3596US11637042B2Self-aligned metal gate for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·3 cites·20 claims
3696US11031395B2Method of forming high performance MOSFETs having varying channel structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·13 cites·20 claims
3796US10910375B2Semiconductor device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 2, 2021·8 cites·20 claims
3896US10505022B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
3996US9917178B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 13, 2018·10 cites·20 claims
4095US12159869B2Backside interconnect structures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·2 cites·20 claims
4195US11444200B2Semiconductor structure with isolating feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
4295US10879379B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·9 cites·20 claims
4395US9698261B2Vertical device architectureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·12 cites·20 claims
4494US12034045B2Semiconductor device structure with nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·1 cites·20 claims
4594US11563001B2Air spacer and capping structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·4 cites·20 claims
4694US11532556B2Structure and method for transistors having backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
4794US10497778B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·7 cites·20 claims
4893US11996409B2Stacking CMOS structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·2 cites·20 claims
4993US11158727B2Structure and method for gate-all-around device with extended channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·8 cites·20 claims
5093US10868015B2Hybrid scheme for improved performance for P-type and N-type FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 15, 2020·2 cites·20 claims

Showing the top 50 of 353 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →