Inventor · disambiguated record
Chih-Pin Tsao
Also filed as: TSAO CHIH-PIN
32 granted patents·11 pending applications·77 citations·filing 2010–2025
96Inventor score
Top patents by PatentIndex Score
43 records- 0196US10153351B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 11, 2018·14 cites·19 claims
- 0295US11948800B2Semiconductor device having work function metal stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0395US10109507B2Fluorine contamination control in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·13 cites·20 claims
- 0493US9831345B2FinFET with rounded source/drain profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 28, 2017·13 cites·20 claims
- 0592US10115808B2finFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·6 cites·20 claims
- 0691US11450757B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 0789US10770570B2FinFET device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·4 cites·20 claims
- 0888US2025366145A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0986US12334349B2Semiconductor device having work function metal stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1085US11776911B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·1 cites·20 claims
- 1185US11211477B2FinFETs having epitaxial capping layer on fin and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·2 cites·20 claims
- 1284US10109742B2Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 23, 2018·5 cites·20 claims
- 1384US2025285868A1Semiconductor device having work function metal stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1482US10163626B2Metal gate structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·3 cites·20 claims
- 1581US10714586B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·2 cites·16 claims
- 1681US10388792B2FinFET with rounded source/drain profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 20, 2019·2 cites·20 claims
- 1780US2024379806A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1880US2025359199A1Threshold voltage modulation by gate height variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1979US12477807B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 2079US2025359174A1Semiconductor Structure with Treated Gate Dielectric Layer and Method for Manufacturing the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2177US9947658B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 17, 2018·2 cites·20 claims
- 2277US8859380B2Integrated circuits and manufacturing methods thereofWU ZHIQIANG·Filed 2010·Granted Oct 14, 2014·4 cites·20 claims
- 2376US11823908B2Semiconductor device having work function metal stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
- 2474US2023387024A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2572US10276568B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·1 cites·20 claims
- 2669US11569362B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 2767US11201059B2Device having work function metal stack and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·20 claims
- 2867US9922976B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·1 cites·20 claims
- 2965US2024014256A1Threshold voltage modulation by gate height variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3064US2024204073A1Semiconductor structure with treated gate dielectric layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3163US10861975B2FinFET with rounded source/drain profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 3261US10497571B2Device having work function metal stack and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·0 cites·20 claims
- 3358US10262878B2Fluorine contamination control in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 16, 2019·0 cites·20 claims
- 3457US10797164B2FinFETs having epitaxial capping layer on fin and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 6, 2020·0 cites·20 claims
- 3557US9520502B2FinFETs having epitaxial capping layer on fin and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 13, 2016·0 cites·19 claims
- 3656US2025126855A1Gate formation processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3755US11024582B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 1, 2021·0 cites·20 claims
- 3853US9502253B2Method of manufacturing an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·0 cites·20 claims
- 3953US2024222377A1Gate stack of forksheet structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4052US2024222431A1Silicide layer of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4148US11107810B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·0 cites·20 claims
- 4242US10157844B2FinFET device having oxide layer among interlayer dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 4342US9831242B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →