Inventor · disambiguated record

Chih-Hao Wang

Also filed as: WANG CHIH-HAO

974 granted patents·456 pending applications·7,549 citations·filing 2001–2025

99Inventor score

Technology areasH10D H10W H10P H01L B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD1,329 TAIWAN SEMICONDUCTOR MFG49 WANG CHIH-HAO7 PIXART IMAGING INC5 MACRONIX INT CO LTD4

Top patents by PatentIndex Score

1,430 records

0199US11615962B2Semiconductor structures and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
0299US11581224B2Method for forming long channel back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 14, 2023·8 cites·20 claims
0399US11532713B2Source/drain contacts and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·6 cites·20 claims
0499US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
0599US11462612B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 4, 2022·6 cites·20 claims
0699US11450664B2Semiconductor device having nanosheet transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
0799US11450751B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·8 cites·20 claims
0899US11443987B2Semiconductor devices with backside air gap dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·6 cites·20 claims
0999US11404548B2Capacitance reduction for backside power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·7 cites·20 claims
1099US11387346B2Gate patterning process for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·11 cites·20 claims
1199US11374093B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·6 cites·20 claims
1299US11362213B2Method for manufacturing a FinFET device with a backside power rail and a backside self-aligned via by etching an extended source trenchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·8 cites·20 claims
1399US11355601B2Semiconductor devices with backside power rail and backside self-aligned viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·14 cites·20 claims
1499US11349004B2Backside vias in semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·6 cites·20 claims
1599US11289606B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·15 cites·20 claims
1699US11233005B1Method for manufacturing an anchor-shaped backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·7 cites·20 claims
1799US11195930B1Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·17 cites·20 claims
1899US10157799B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·135 cites·20 claims
1999US10109721B2Horizontal gate-all-around device having wrapped-around source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·140 cites·20 claims
2099US9887269B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·151 cites·20 claims
2199US9881993B2Method of forming semiconductor structure with horizontal gate all around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 30, 2018·143 cites·19 claims
2299US9818872B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·166 cites·18 claims
2399US9608116B2FINFETs with wrap-around silicide and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·1.3k cites·20 claims
2498US12148836B2Gate-all-around structure and methods of forming the samePARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2023·Granted Nov 19, 2024·3 cites·20 claims
2598US11961915B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·4 cites·20 claims
2698US11948973B2Gate-all-around field-effect transistor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·4 cites·20 claims
2798US11929417B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
2898US11916072B2Gate isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·3 cites·20 claims
2998US11855096B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·4 cites·20 claims
3098US11830769B2Semiconductor device with air gaps and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·4 cites·20 claims
3198US11798944B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·4 cites·20 claims
3298US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
3398US11637207B2Gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·3 cites·20 claims
3498US11621197B2Semiconductor device with gate cut feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·5 cites·20 claims
3598US11621352B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·4 cites·20 claims
3698US11616062B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·7 cites·20 claims
3798US11600533B2Semiconductor device fabrication methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·4 cites·20 claims
3898US11527534B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
3998US11502187B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 15, 2022·3 cites·20 claims
4098US11482595B1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·4 cites·20 claims
4198US11456209B2Spacers for semiconductor devices including a backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·4 cites·20 claims
4298US11450662B2Gate isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
4398US11444170B1Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·5 cites·20 claims
4498US11387237B2Semiconductor component having a fin and an epitaxial contact structure over an epitaxial layer thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
4598US11355611B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
4698US11342413B2Selective liner on backside via and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·5 cites·20 claims
4798US11315925B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·7 cites·20 claims
4898US11296082B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·6 cites·20 claims
4998US11296081B2Integration of silicon channel nanostructures and silicon-germanium channel nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·4 cites·20 claims
5098US11264327B2Backside power rail structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·10 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →