Inventor · disambiguated record
Chunyao Wang
Also filed as: WANG CHUNYAO
36 granted patents·15 pending applications·36 citations·filing 2011–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD47YINDU KITCHEN EQUIPMENT CO LTD2UNIV TSINGHUA1ZHOU JUNJIE1
Top patents by PatentIndex Score
51 records- 0195US10134604B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·10 cites·20 claims
- 0294US11521856B2Semiconductor patterning and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·4 cites·20 claims
- 0394US11437245B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·20 claims
- 0493US11929254B2Semiconductor patterning and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0592US11380776B2Field-effect transistor device with gate spacer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 5, 2022·2 cites·20 claims
- 0691US11652158B2Field-effect transistor device with gate spacer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·1 cites·20 claims
- 0786US2025329533A1Semiconductor patterning and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0883US12437996B2Semiconductor patterning and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 0983US12266728B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 1083US12261036B2Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1183US2024387729A1Method of modulating stress of dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1283US2024379346A1Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1382US11393674B2Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 19, 2022·2 cites·20 claims
- 1482US2024387697A1Field-effect transistor device with gate spacer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1581US10483168B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
- 1681US2025287680A1Semiconductor device with dielectric structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1780US12342605B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 24, 2025·0 cites·20 claims
- 1880US12176349B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 1980US12148813B2Field-effect transistor device with gate spacer structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 2080US2025048726A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2179US12125911B2Method of modulating stress of dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 2279US11942549B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 2379US11830727B2Forming low-stress silicon nitride layer through hydrogen treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 2476US12002719B2Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 2576US2024274476A1Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2675US2025311373A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2774US2024186142A1Photolithography Methods and Resulting StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2872US12444602B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 2972US11527653B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 3072US11502196B2Stress modulation for dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 3171US11688645B2Structure and formation method of semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 3271US11557518B2Gapfill structure and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 3369US11935746B2Pattern formation through mask stress management and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·16 claims
- 3469US11764221B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 3568US12419097B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 3666US11854819B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3764US10854521B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 3863US2025372442A1Shallow-trench isolation protection structure for nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3962US10720526B2Stress modulation for dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·0 cites·20 claims
- 4061US10510612B2Low-K gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
- 4161US2025267907A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4260USD855387SCover for food trayYINDU KITCHEN EQUIPMENT CO LTD·Filed 2017·Granted Aug 6, 2019·8 cites·1 claims
- 4359US10867807B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 4454US2023163197A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4553US12266541B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·0 cites·20 claims
- 4653US2024258100A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4753US2023187265A1Stress Modulation Using STI Capping Layer for Reducing Fin BendingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4850US11955370B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 4946US2014069284A1Chafer frame with foldable legsZHOU JUNJIE·Filed 2011·Application pending·0 cites
- 5043US11490821B2Non-contact neck-based respiratory and pulse signal detection method, apparatus, and imaging deviceUNIV TSINGHUA·Filed 2018·Granted Nov 8, 2022·0 cites·8 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →