Inventor · disambiguated record
Chao-Hsun Wang
Also filed as: WANG CHAO · WANG CHAO-HSUN
60 granted patents·19 pending applications·57 citations·filing 2011–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD74WANG CHAO-HSUN2INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD1LEE CHIA-YU1UNIV NAT CHIAO TUNG1
Top patents by PatentIndex Score
79 records- 0197US11961886B2Semiconductor structure with conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·3 cites·20 claims
- 0297US11527614B2Semiconductor structure with conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·4 cites·20 claims
- 0397US11189525B2Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·7 cites·20 claims
- 0496US11532561B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0596US10923573B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·8 cites·20 claims
- 0693US12057392B2Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
- 0791US9779984B1Method of forming trenches with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 0890US2025359213A1Semiconductor transistor structure with nanostructures and conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0989US12266703B2Dielectric structures for semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·1 cites·20 claims
- 1089US12176435B2Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·1 cites·20 claims
- 1189US11322394B2Contact formation method and related structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
- 1288US10418453B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·3 cites·20 claims
- 1387US2025359137A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1486US12342598B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 1585US12389646B2Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 1685US10535555B2Contact plugs and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·3 cites·20 claims
- 1784US12278188B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 1884US12243940B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1984US10861740B2Method of forming trenches with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 2083US12506034B2Polishing interconnect structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·20 claims
- 2183US2025239527A1Different Via Configurations for Different Via Interface RequirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2282US11227830B2Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·20 claims
- 2382US10269621B2Contact plugs and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·3 cites·20 claims
- 2482US2024371687A1Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2581US12211787B2Interconnect structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2681US12125743B2Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 2780US11901426B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 2880US2025248075A1Methods of forming air spacers in semicondutor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2979US12142565B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 3079US11227950B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 3179US2025343116A1Semiconductor structure with conductive structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3279US2024387660A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3378US11682729B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 3478US2025359262A1Connection between gate and source/drain featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3577US10163703B2Method for forming self-aligned contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 3677US2024379378A1Metal Contacts on Metal Gates and Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3777US2024355730A1Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3876US11915971B2Contact formation method and related structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 3976US2025351517A1Semiconductor structure with self-aligned conductive featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4074US11978664B2Polishing interconnect structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 4174US11682579B2Method of forming trenches with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 4274US11670544B2Via-first process for connecting a contact and a gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 4374US11532717B2Forming metal contacts on metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 4474US11107896B2Vertical interconnect features and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·1 cites·20 claims
- 4574US10950728B2Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 16, 2021·2 cites·20 claims
- 4674US10755945B2Metal contacts on metal gates and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·1 cites·20 claims
- 4774US2024379556A1Forming Liners to Facilitate The Formation of Copper-Containing Vias in Advanced Technology NodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4874US2024379432A1Contact formation method and related structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4973US2025174553A1Interconnect structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5071US12406907B2Semiconductor structure with conductive_structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →