Inventor · disambiguated record

Ching-Chun Wang

Also filed as: WANG CHING-CHUN

134 granted patents·9 pending applications·738 citations·filing 2000–2025

99Inventor score

Technology areasH10W H10F H01L H10P H04N

Files withTAIWAN SEMICONDUCTOR MFG CO LTD102 TAIWAN SEMICONDUCTOR MFG25 CYPRESS SEMICONDUCTOR CORP4 HSU TZU-HSUAN3 ADVANCED SEMICONDUCTOR ENG2

Top patents by PatentIndex Score

143 records

0198US11069736B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·6 cites·20 claims
0298US9704827B2Hybrid bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·32 cites·20 claims
0397US9728521B2Hybrid bond using a copper alloy for yield improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·227 cites·20 claims
0497US8053856B1Backside illuminated sensor processingTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·26 cites·19 claims
0597US7999342B2Image sensor element for backside-illuminated sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 16, 2011·44 cites·14 claims
0696US12315843B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·2 cites·20 claims
0796US10038025B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
0895US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
0995US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
1094US11916100B2Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
1194US10566374B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·7 cites·20 claims
1294US10461109B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·9 cites·20 claims
1394US9711562B2Apparatus and method for reducing optical cross-talk in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·7 cites·20 claims
1494US8866250B2Multiple metal film stack in BSI chipsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 21, 2014·11 cites·20 claims
1593US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
1693US11222915B2Pad structure for front side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·7 cites·20 claims
1793US10943940B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
1893US10283549B2Via support structure under pad areas for BSI bondability improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·6 cites·20 claims
1993US10038026B2Bond pad structure for bonding improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·7 cites·20 claims
2093US9954022B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·7 cites·20 claims
2193US9871070B2Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·10 cites·20 claims
2293US9659981B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·9 cites·20 claims
2393US7312484B1Pixel having an oxide layer with step regionCYPRESS SEMICONDUCTOR CORP·Filed 2006·Granted Dec 25, 2007·14 cites·19 claims
2492US10727205B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·6 cites·20 claims
2592US10269857B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·5 cites·20 claims
2692US9728570B2Deep trench isolation fabrication for BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·20 claims
2792US9666566B13DIC structure and method for hybrid bonding semiconductor wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·9 cites·20 claims
2892US6518085B1Method for making spectrally efficient photodiode structures for CMOS color imagersTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Feb 11, 2003·58 cites·17 claims
2991US9473753B2Apparatus and method for reducing optical cross-talk in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 18, 2016·7 cites·20 claims
3091US7656000B2Photodetector for backside-illuminated sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 2, 2010·12 cites·19 claims
3190US11410972B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
3290US11322481B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
3390US11088196B2Metal reflector grounding for noise reduction in light detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·20 claims
3489US11984465B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·1 cites·20 claims
3589US10622394B2Image sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 14, 2020·5 cites·20 claims
3689US10522586B2Apparatus for reducing optical cross-talk in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
3789US10014340B2Stacked SPAD image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 3, 2018·7 cites·20 claims
3889US2025351596A1Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3988US10727265B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·3 cites·20 claims
4088US9966412B2Method for reducing optical cross-talk in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 8, 2018·3 cites·20 claims
4188US8796805B2Multiple metal film stack in BSI chipsTING SHYH-FANN·Filed 2012·Granted Aug 5, 2014·11 cites·20 claims
4287US11804473B2Hybrid bond pad structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·1 cites·20 claims
4387US11069731B2Apparatus for reducing optical cross-talk in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·2 cites·20 claims
4487US9679939B1Backside illuminated image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·5 cites·20 claims
4587US9425343B2Mechanisms for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 23, 2016·4 cites·22 claims
4686US12211876B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
4786US7838325B2Method to optimize substrate thickness for image sensor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Nov 23, 2010·8 cites·20 claims
4885US12464839B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
4985US10510789B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
5085US9812483B2Back-side illuminated (BSI) image sensor with global shutter schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims

Showing the top 50 of 143 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →