Inventor · disambiguated record
Ching-Ya Wang
Also filed as: WANG CHING · WANG CHING-YA
14 granted patents·2 pending applications·132 citations·filing 2003–2024
92Inventor score
Top patents by PatentIndex Score
16 records- 0197US7834345B2Tunnel field-effect transistors with superlattice channelsTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 16, 2010·57 cites·20 claims
- 0288US7329956B1Dual damascene cleaning methodTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 12, 2008·16 cites·20 claims
- 0384US7332449B2Method for forming dual damascenes with supercritical fluid treatmentsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 19, 2008·10 cites·15 claims
- 0483US8030210B2Contact barrier structure and manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Oct 4, 2011·6 cites·14 claims
- 0582US8669163B2Tunnel field-effect transistors with superlattice channelsBHUWALKA KRISHNA KUMAR·Filed 2010·Granted Mar 11, 2014·5 cites·19 claims
- 0681US7588995B2Method to create damage-free porous low-k dielectric films and structures resulting therefromTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 15, 2009·7 cites·18 claims
- 0779US7314828B2Repairing method for low-k dielectric materialsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 1, 2008·6 cites·16 claims
- 0878US7709903B2Contact barrier structure and manufacturing methodsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 4, 2010·6 cites·18 claims
- 0978US7667247B2Method for passivating gate dielectric filmsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 23, 2010·7 cites·20 claims
- 1062US7951723B2Integrated etch and supercritical CO2 process and chamber designTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 31, 2011·1 cites·20 claims
- 1156US2025349663A1Heat spreader structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1255US6875285B2System and method for dampening high pressure impact on porous materialsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 5, 2005·5 cites·14 claims
- 1352US7387973B2Method for improving low-K dielectrics by supercritical fluid treatmentsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 17, 2008·5 cites·30 claims
- 1447US7538398B2System and method for forming a semiconductor device source/drain contactTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 26, 2009·0 cites·14 claims
- 1546US7354623B2Surface modification of a porous organic material through the use of a supercritical fluidTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 8, 2008·1 cites·14 claims
- 1638US2005158664A1Method of integrating post-etching cleaning process with deposition for semiconductor deviceFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →