Inventor · disambiguated record
Chen-Jong Wang
Also filed as: WANG CHEN-JONG
109 granted patents·39 pending applications·2,304 citations·filing 1995–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD83TAIWAN SEMICONDUCTOR MFG57TZENG KUO-CHYUAN3LIN YI-CHING2TU KUO-CHI2
Top patents by PatentIndex Score
148 records- 0198US9443796B2Air trench in packages incorporating hybrid bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·221 cites·20 claims
- 0298US9142517B2Hybrid bonding mechanisms for semiconductor wafersTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 22, 2015·247 cites·17 claims
- 0397US9960129B2Hybrid bonding mechanisms for semiconductor wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 1, 2018·22 cites·17 claims
- 0496US6037222AMethod for fabricating a dual-gate dielectric module for memory embedded logic using salicide technology and polycide technologyTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·148 cites·15 claims
- 0595US12507490B2Semiconductor device including germanium region disposed in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·2 cites·20 claims
- 0694US5607874AMethod for fabricating a DRAM cell with a T shaped storage capacitorTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 4, 1997·86 cites·8 claims
- 0793US10692914B2Implant damage free image sensor and method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 23, 2020·3 cites·20 claims
- 0893US9871070B2Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·10 cites·20 claims
- 0993US6620679B1Method to integrate high performance 1T ram in a CMOS process using asymmetric structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 16, 2003·61 cites·89 claims
- 1092US5668035AMethod for fabricating a dual-gate dielectric module for memory with embedded logic technologyTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·127 cites·20 claims
- 1191US10510788B2Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1291US10177187B2Implant damage free image sensor and method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·6 cites·20 claims
- 1391US8748284B2Method of manufacturing decoupling MIM capacitor designs for interposersTZENG KUO-CHYUAN·Filed 2011·Granted Jun 10, 2014·13 cites·20 claims
- 1489US10797091B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·20 claims
- 1589US9786628B2Air trench in packages incorporating hybrid bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 10, 2017·4 cites·20 claims
- 1689US6271125B1Method to reduce contact hole aspect ratio for embedded DRAM arrays and logic devices, via the use of a tungsten bit line structureTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 7, 2001·42 cites·11 claims
- 1788US9559134B2Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·8 cites·20 claims
- 1888US8716100B2Method of fabricating metal-insulator-metal (MIM) capacitor within topmost thick inter-metal dielectric layersTZENG KUO-CHYUAN·Filed 2011·Granted May 6, 2014·8 cites·20 claims
- 1986US11658196B2Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·1 cites·20 claims
- 2086US10797096B2Semiconductor image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·20 claims
- 2186US9257409B2Decoupling MIM capacitor designs for interposers and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·5 cites·20 claims
- 2286US6017791AMulti-layer silicon nitride deposition method for forming low oxidation temperature thermally oxidized silicon nitride/silicon oxide (no) layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 25, 2000·84 cites·15 claims
- 2386US2025318308A1Image sensor having a gate dielectric structure for improved device scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2485US6420226B1Method of defining a buried stack capacitor structure for a one transistor RAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 16, 2002·38 cites·27 claims
- 2584US11222896B2Semiconductor arrangement with capacitor and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·2 cites·20 claims
- 2684US9178008B2Metal-insulator-metal capacitor with current leakage protectionCHEN KUO-JI·Filed 2012·Granted Nov 3, 2015·6 cites·20 claims
- 2784US6638813B1Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 28, 2003·33 cites·30 claims
- 2884US2025098353A1Image sensor having a gate dielectric structure for improved device scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2983US9508722B2Semiconductor arrangment with capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 29, 2016·4 cites·20 claims
- 3083US5668038AOne step smooth cylinder surface formation process in stacked cylindrical DRAM productsTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·47 cites·21 claims
- 3183US2025351593A1Structure and Method for Backside-Illuminated Image DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3282US5677557AMethod for forming buried plug contacts on semiconductor integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Oct 14, 1997·61 cites·3 claims
- 3382US2025338661A1Frontside deep trench isolation (fdti) structure for cmos image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3481US8617949B2Capacitor and method for making sameTU KUO-CHI·Filed 2011·Granted Dec 31, 2013·4 cites·20 claims
- 3581US6004857AMethod to increase DRAM capacitor via rough surface storage node plateTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 21, 1999·51 cites·24 claims
- 3681US2025318297A1Cmos image sensors and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3780US9401395B2Decoupling MIM capacitor designs for interposers and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 26, 2016·2 cites·20 claims
- 3880US6265301B1Method of forming metal interconnect structures and metal via structures using photolithographic and electroplating or electro-less plating proceduresTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 24, 2001·59 cites·20 claims
- 3980US2025318287A1Semiconductor device including germanium region disposed in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4079US2025351608A1Image sensor integrated chip structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4178US12191336B2Image sensor having a gate dielectric structure for improved device scalingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 4278US12040336B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 4378US10269807B2Semiconductor arrangement having capacitor separated from active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·1 cites·20 claims
- 4478US6613690B1Approach for forming a buried stack capacitor structure featuring reduced polysilicon stringersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·29 cites·30 claims
- 4578US5702989AMethod for fabricating a tub structured stacked capacitor for a DRAM cell having a central columnTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Dec 30, 1997·43 cites·20 claims
- 4678US2024313010A1Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4777US9466663B2Semiconductor arrangement having capacitor separated from active regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 11, 2016·2 cites·20 claims
- 4877US6015730AIntegration of SAC and salicide processes by combining hard mask and poly definitionTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 18, 2000·54 cites·15 claims
- 4977US2024355764A1Device crack-stop structure to prevent damage due to dicing crackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5076US8659121B2Semiconductor devices with orientation-free decoupling capacitors and methods of manufacture thereofTU KUO-CHI·Filed 2011·Granted Feb 25, 2014·4 cites·10 claims
Showing the top 50 of 148 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chen-Jong Wang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →