Inventor · disambiguated record
Chen-Han Wang
Also filed as: WANG CHEN-HAN
27 granted patents·6 pending applications·14 citations·filing 2014–2025
93Inventor score
Top patents by PatentIndex Score
33 records- 0195US11296187B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 0294US12119404B2Gate all around structure with additional silicon layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·1 cites·20 claims
- 0391US11688766B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·1 cites·20 claims
- 0490US11942358B2Low thermal budget dielectric for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
- 0588US10438948B2Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 8, 2019·4 cites·20 claims
- 0683US11264485B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·2 cites·20 claims
- 0783US2025324732A1Methods for manufacturing semiconductor devices with tunable low-k inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0881US12324200B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 0981US2024387358A1Methods for manufacturing an interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1081US2025311360A1Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LID·Filed 2025·Application pending·0 cites
- 1179US12308312B2Interconnect structure and method for manufacturing the interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 1279US11735666B2Gate all around structure with additional silicon layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1378US11430891B2Gate all around structure with additional silicon layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·1 cites·20 claims
- 1477US2024363722A1Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1577US2025331212A1Semiconductor device with silicide structures surrounding epitaxial structures and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1676US12094952B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 1776US2025331283A1Dual silicide layers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1875US12369388B2Semiconductor devices with tunable low-K inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1975US11637062B2Interconnect structure and method for manufacturing the interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 25, 2023·0 cites·20 claims
- 2073US12363980B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2169US12501687B2Dual silicide layers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 2269US12360153B2In-line device electrical property estimating method and test structure of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2369US11257753B2Interconnect structure and method for manufacturing the interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 2468US12412779B2Bilayer seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2568US11626482B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2667US11848238B2Methods for manufacturing semiconductor devices with tunable low-k inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·0 cites·20 claims
- 2765US12376321B2Semiconductor device with silicide structures surrounding epitaxial structures and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 2865US11063042B2Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·20 claims
- 2962US10461079B2Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 3057US11502166B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 3153US11901220B2Bilayer seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 13, 2024·0 cites·20 claims
- 3250US11480606B2In-line device electrical property estimating method and test structure of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 25, 2022·0 cites·20 claims
- 3347US9496398B2Epitaxial source/drain regions in FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 15, 2016·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →