Inventor · disambiguated record
Cheng-Yen Wen
Also filed as: WEN CHENG-YEN
3 granted patents·10 pending applications·0 citations·filing 2022–2025
46Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0176US2025359236A1Epitaxial structures grown on material with a crystallographic orientation of {110}TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0274US2025301756A1Nano-structure transistors with air inner spacers and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0373US2025311324A1Transistor source/drain regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0472US2025318187A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0571US12396242B2Nano-structure transistors with air inner spacers and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 0671US2025294805A1Method of forming source/drain regions with quadrilateral layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0768US12396209B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 0865US12363945B2Method of forming source/drain regions with quadrilateral layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 0960US2023343819A1Epitaxial structures grown on material with a crystallographic orientation of {110}TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1059US2025234610A1Low-resistance source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1159US2025234611A1Source/drain structures with void for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1255US2025203904A1Diffusion barrier structures in source/drain structures of nanostructure transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1352US2025275184A1Dislocations in gaa transistors and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →