Inventor · disambiguated record
Christopher J. Wiegand
Also filed as: WIEGAND CHRISTOPHER · WIEGAND CHRISTOPHER J
54 granted patents·12 pending applications·101 citations·filing 2012–2024
97Inventor score
Top patents by PatentIndex Score
66 records- 0194US11018222B1Metallization in integrated circuit structuresINTEL CORP·Filed 2019·Granted May 25, 2021·16 cites·20 claims
- 0292US11062752B2Spin orbit torque memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Jul 13, 2021·5 cites·8 claims
- 0392US10340445B2PSTTM device with bottom electrode interface materialINTEL CORP·Filed 2015·Granted Jul 2, 2019·5 cites·16 claims
- 0492US8896030B2Integrated circuits with selective gate electrode recessMUKHERJEE SRIJIT·Filed 2012·Granted Nov 25, 2014·21 cites·16 claims
- 0588US11107908B2Transistors with metal source and drain contacts including a Heusler alloyINTEL CORP·Filed 2016·Granted Aug 31, 2021·5 cites·21 claims
- 0687US11276730B2Spin orbit torque memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Mar 15, 2022·3 cites·17 claims
- 0787US2024347394A1Integrated circuits with recessed gate electrodesINTEL CORP·Filed 2024·Application pending·0 cites
- 0886US11367749B2Spin orbit torque (SOT) memory devices and their methods of fabricationINTEL CORP·Filed 2018·Granted Jun 21, 2022·3 cites·14 claims
- 0985US11264558B2Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropyINTEL CORP·Filed 2018·Granted Mar 1, 2022·2 cites·23 claims
- 1085US11063088B2Magnetic memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Jul 13, 2021·3 cites·22 claims
- 1185US10326075B2PSTTM device with multi-layered filter stackINTEL CORP·Filed 2015·Granted Jun 18, 2019·2 cites·20 claims
- 1284US11411047B2Stacked transistor bit-cell for magnetic random access memoryINTEL CORP·Filed 2018·Granted Aug 9, 2022·3 cites·22 claims
- 1384US11056593B2Semiconductor devices with metal contacts including crystalline alloysINTEL CORP·Filed 2017·Granted Jul 6, 2021·3 cites·19 claims
- 1484US10651093B2Integrated circuits with recessed gate electrodesINTEL CORP·Filed 2018·Granted May 12, 2020·2 cites·10 claims
- 1584US9418898B2Integrated circuits with selective gate electrode recessINTEL CORP·Filed 2014·Granted Aug 16, 2016·4 cites·18 claims
- 1682US11374164B2Multi-layer spin orbit torque electrodes for perpendicular magnetic random access memoryINTEL CORP·Filed 2018·Granted Jun 28, 2022·3 cites·21 claims
- 1782US10020232B2Integrated circuits with recessed gate electrodesINTEL CORP·Filed 2016·Granted Jul 10, 2018·2 cites·16 claims
- 1881US10411068B2Electrical contacts for magnetoresistive random access memory devicesINTEL CORP·Filed 2015·Granted Sep 10, 2019·3 cites·25 claims
- 1977US11557629B2Spin orbit memory devices with reduced magnetic moment and methods of fabricationINTEL CORP·Filed 2019·Granted Jan 17, 2023·2 cites·19 claims
- 2076US12165928B2Integrated circuits with recessed gate electrodesINTEL CORP·Filed 2021·Granted Dec 10, 2024·0 cites·20 claims
- 2174US10559744B2Texture breaking layer to decouple bottom electrode from PMTJ deviceINTEL CORP·Filed 2016·Granted Feb 11, 2020·2 cites·17 claims
- 2273US11818963B2Nano-rod spin orbit coupling based magnetic random access memory with shape induced perpendicular magnetic anisotropyINTEL CORP·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 2373US10943950B2Magnetic memory devices with enhanced tunnel magnetoresistance ratio (TMR) and methods of fabricationINTEL CORP·Filed 2019·Granted Mar 9, 2021·1 cites·20 claims
- 2472US11183432B2Integrated circuits with recessed gate electrodesINTEL CORP·Filed 2020·Granted Nov 23, 2021·0 cites·10 claims
- 2570US9318694B2Methods of forming a magnetic random access memory etch spacer and structures formed therebyINTEL CORP·Filed 2013·Granted Apr 19, 2016·4 cites·24 claims
- 2668US11476412B2Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memoryINTEL CORP·Filed 2018·Granted Oct 18, 2022·2 cites·20 claims
- 2768US10418415B2Interconnect capping process for integration of MRAM devices and the resulting structuresINTEL CORP·Filed 2016·Granted Sep 17, 2019·1 cites·24 claims
- 2866US11404630B2Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form sameINTEL CORP·Filed 2016·Granted Aug 2, 2022·2 cites·17 claims
- 2964US10847714B2PSTTM device with multi-layered filter stackINTEL CORP·Filed 2019·Granted Nov 24, 2020·0 cites·20 claims
- 3061US10079266B2Modulation of magnetic properties through implantation and associated structuresINTEL CORP·Filed 2014·Granted Sep 18, 2018·1 cites·9 claims
- 3159US2025393283A1Thin film transistors having self-aligned contact metallizationINTEL CORP·Filed 2024·Application pending·0 cites
- 3257US10868233B2Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structuresINTEL CORP·Filed 2016·Granted Dec 15, 2020·1 cites·15 claims
- 3354US11437567B2Perpendicular spin transfer torque magnetic mechanismINTEL CORP·Filed 2016·Granted Sep 6, 2022·0 cites·19 claims
- 3454US2025098179A1Memory layers at opposing sides of a complementary metal-oxide semiconductor layerSHARMA ABHISHEK A·Filed 2023·Application pending·0 cites
- 3554US2024001948A1Computer-implemented method and system for creating or updating a scenarios libraryDSPACE GMBH·Filed 2023·Application pending·0 cites
- 3652US12406110B2Computer-implemented method for low-latency generation and input of sensor data into a control unit or into control unit networksDSPACE GMBH·Filed 2021·Granted Sep 2, 2025·0 cites·9 claims
- 3751US10636960B2Strained perpendicular magnetic tunnel junction devicesINTEL CORP·Filed 2015·Granted Apr 28, 2020·0 cites·20 claims
- 3850US11508903B2Spin orbit torque device with insertion layer between spin orbit torque electrode and free layer for improved performanceINTEL CORP·Filed 2018·Granted Nov 22, 2022·0 cites·19 claims
- 3950US11411173B2Perpendicular spin transfer torque devices with improved retention and thermal stabilityINTEL CORP·Filed 2018·Granted Aug 9, 2022·0 cites·20 claims
- 4050US11031545B2High stability free layer for perpendicular spin torque transfer memoryINTEL CORP·Filed 2016·Granted Jun 8, 2021·0 cites·16 claims
- 4149US11737368B2Magnetic memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Aug 22, 2023·0 cites·8 claims
- 4249US11594673B2Two terminal spin orbit memory devices and methods of fabricationINTEL CORP·Filed 2019·Granted Feb 28, 2023·0 cites·20 claims
- 4349US10580970B2PSTTM device with free magnetic layers coupled through a metal layer having high temperature stabilityINTEL CORP·Filed 2015·Granted Mar 3, 2020·0 cites·16 claims
- 4448US11594270B2Perpendicular spin injection via spatial modulation of spin orbit couplingINTEL CORP·Filed 2018·Granted Feb 28, 2023·0 cites·25 claims
- 4548US11444237B2Spin orbit torque (SOT) memory devices and methods of fabricationINTEL CORP·Filed 2018·Granted Sep 13, 2022·0 cites·9 claims
- 4648US11063151B2Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structuresINTEL CORP·Filed 2017·Granted Jul 13, 2021·0 cites·25 claims
- 4748US10770651B2Perpendicular spin transfer torque memory (PSTTM) devices with enhanced perpendicular anisotropy and methods to form sameINTEL CORP·Filed 2016·Granted Sep 8, 2020·0 cites·25 claims
- 4847US11770979B2Conductive alloy layer in magnetic memory devices and methods of fabricationINTEL CORP·Filed 2018·Granted Sep 26, 2023·0 cites·14 claims
- 4947US11362263B2Spin orbit torque (SOT) memory devices and methods of fabricationINTEL CORP·Filed 2018·Granted Jun 14, 2022·0 cites·20 claims
- 5047US2023369508A1Multi-layered or graded semiconductor region in thin film transistor (tft) structuresINTEL CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →