Inventor · disambiguated record
Chang-Ming Wu
Also filed as: WU CHANG-MING
97 granted patents·10 pending applications·302 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD93WU CHANG-MING7TAIWAN SEMICONDUCTOR MFG4NANYA TECHNOLOGY CORP3
Top patents by PatentIndex Score
107 records- 0197US9917165B2Memory cell structure for improving erase speedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 13, 2018·28 cites·20 claims
- 0297US9583591B2Si recess method in HKMG replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·20 cites·20 claims
- 0397US9543511B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·22 cites·20 claims
- 0496US9570454B2Structure with emedded EFS3 and FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·15 cites·20 claims
- 0595US11932534B2MEMS device having a metallization structure embedded in a dielectric structure with laterally offset sidewalls of a first portion and a second portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
- 0695US9614048B2Split gate flash memory structure and method of making the split gate flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 4, 2017·13 cites·15 claims
- 0795US9536969B2Self-aligned split gate flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 3, 2017·22 cites·20 claims
- 0894US9865610B2Si recess method in HKMG replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·9 cites·20 claims
- 0993US9711508B2Capacitor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·9 cites·19 claims
- 1093US9567207B2Recess with tapered sidewalls for hermetic seal in MEMS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·7 cites·20 claims
- 1191US9620372B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·6 cites·20 claims
- 1290US10029910B1Formation method of MEMS device structure with cavitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 24, 2018·5 cites·20 claims
- 1390US9496276B2CMP fabrication solution for split gate memory embedded in HK-MG processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 15, 2016·12 cites·19 claims
- 1490US9391151B2Split gate memory device for improved erase speedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 12, 2016·11 cites·19 claims
- 1590US9136393B2HK embodied flash memory and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 15, 2015·8 cites·20 claims
- 1689US9691883B2Asymmetric formation approach for a floating gate of a split gate flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 27, 2017·7 cites·20 claims
- 1788US10766763B2Sidewall stopper for MEMS deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·4 cites·20 claims
- 1888US10562763B2Fence structure to prevent stiction in a MEMS motion sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·3 cites·20 claims
- 1988US9741728B2Method for forming a split-gate flash memory cell device with a low power logic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 22, 2017·4 cites·20 claims
- 2087US9660188B2Phase change memory structure to reduce leakage from the heating element to the surrounding materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·6 cites·16 claims
- 2186US2025261374A1Memory Devices and Method of Fabricating SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2285US10294098B2Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 21, 2019·4 cites·20 claims
- 2385US10048220B2Biosensor field effect transistor having specific well structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 14, 2018·2 cites·18 claims
- 2484US12336229B2Split gate memory device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 2584US11765980B2Method for forming a hard mask with a tapered profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·1 cites·20 claims
- 2683US10784091B2Process and related device for removing by-product on semiconductor processing chamber sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·2 cites·20 claims
- 2783US9502515B2Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·3 cites·20 claims
- 2883US9484352B2Method for forming a split-gate flash memory cell device with a low power logic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 1, 2016·4 cites·20 claims
- 2983US9472645B1Dual control gate spacer structure for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·3 cites·20 claims
- 3083US9450057B2Split gate cells for embedded flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·6 cites·20 claims
- 3183US9257571B1Memory gate first approach to forming a split gate flash memory cell deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 9, 2016·6 cites·20 claims
- 3283US2024331988A1Process and related device for removing by-product on semiconductor processing chamber sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3382US12114576B2Method for forming a hard mask with a tapered profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 3482US9559177B2Memory devices and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 31, 2017·3 cites·20 claims
- 3581US12324156B2Memory devices and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 3681US9978603B2Memory devices and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·2 cites·20 claims
- 3781US9589976B2Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·3 cites·20 claims
- 3881US9397228B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 19, 2016·5 cites·20 claims
- 3981US9159842B1Embedded nonvolatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 13, 2015·3 cites·20 claims
- 4081US9082651B2Memory devices and method of forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 14, 2015·4 cites·20 claims
- 4181US9076681B2Memory devices and method of fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·4 cites·20 claims
- 4280US9728545B2Method for preventing floating gate variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·3 cites·20 claims
- 4379US11279615B2Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 22, 2022·2 cites·20 claims
- 4477US9391085B2Self-aligned split gate flash memory having liner-separated spacers above the memory gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 12, 2016·3 cites·20 claims
- 4577US2025359072A1Phase-change device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4676US11658224B2Split gate memory device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·0 cites·20 claims
- 4776US9484351B2Split gate memory device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 1, 2016·2 cites·20 claims
- 4875US11203522B2Sidewall stopper for MEMS deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 21, 2021·0 cites·20 claims
- 4974US12043537B2Method of manufacturing a microelectromechanical systems (MEMS) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 23, 2024·0 cites·20 claims
- 5074US9646978B2Self-aligned flash memory device with word line having reduced height at outer edge opposite to gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·2 cites·20 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →