Inventor · disambiguated record
Chung-Chiang Wu
Also filed as: WU Chung-Chiang
62 granted patents·15 pending applications·134 citations·filing 2015–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD77
Top patents by PatentIndex Score
77 records- 0199US11404312B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·8 cites·19 claims
- 0298US9935173B1Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·37 cites·20 claims
- 0396US12021147B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
- 0495US11430698B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 0594US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 0694US10269569B2Semiconductor device and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·9 cites·20 claims
- 0794US9871114B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·8 cites·20 claims
- 0893US11563120B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·2 cites·20 claims
- 0993US10833196B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·5 cites·20 claims
- 1093US9978601B2Methods for pre-deposition treatment of a work-function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 22, 2018·8 cites·20 claims
- 1192US11842928B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·1 cites·20 claims
- 1292US11594610B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 1391US10504789B1Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·5 cites·20 claims
- 1491US10283619B2Metal gate scheme for device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·5 cites·20 claims
- 1590US11430652B2Controlling threshold voltages through blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·5 cites·19 claims
- 1690US11289480B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 1789US10692770B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·4 cites·20 claims
- 1887US11532509B2Selective hybrid capping layer for metal gates of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 1987US10741400B2Gate replacement structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·3 cites·19 claims
- 2087US9761683B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 12, 2017·5 cites·21 claims
- 2186US12142530B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 12, 2024·1 cites·20 claims
- 2285US11538805B2Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·1 cites·20 claims
- 2384US12183638B2In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2484US10128237B2Methods of gate replacement in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 13, 2018·3 cites·19 claims
- 2583US12033893B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 2683US11302818B2Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 12, 2022·2 cites·20 claims
- 2783US10504734B2Semiconductor device and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 2882US10847637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
- 2982US10756087B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
- 3082US2024379448A1In-situ formation of metal gate modulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3180US12356656B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 3280US2025201564A1Method of manufacturing a semiconductor device with a work-function layer having a concentration of fluorineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3379US2024387276A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3478US12142531B2Pre-deposition treatment for FET technology and devices formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 3578US11769694B2Contact plug with impurity variationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·20 claims
- 3678US2024379810A1Gate structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3778US2025185344A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3877US12272556B2Method of manufacturing a semiconductor device with a work-function layer having a concentration of fluorineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 3977US12148810B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 4077US12040235B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 4177US2024363627A1Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4277US2024222108A1Controlling threshold voltages through blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4376US11961732B2Controlling threshold voltages through blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 4476US11075275B2Metal gate fill for short-channel and long-channel semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·2 cites·20 claims
- 4576US2024162349A1Gate resistance reduction through low-resistivity conductive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4676US2025366114A1Metal caps for gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4775US12087767B2Method of tuning threshold voltages of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4875US2024387257A1Selective hybrid capping layer for metal gates of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4974US10867864B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·1 cites·20 claims
- 5074US2025338587A1Method of forming metal gate fin electrode structure by etching back metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →