Inventor · disambiguated record
Cheng-Hsien Wu
Also filed as: WU CHENG-HSIEN
161 granted patents·43 pending applications·5,176 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD132TAIWAN SEMICONDUCTOR MFG16WU CHENG-HSIEN11NANJING GENSCRIPT BIOTECH CO LTD9TWIST BIOSCIENCE CORP9
Top patents by PatentIndex Score
204 records- 0199US9859380B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·205 cites·20 claims
- 0299US9660033B1Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·58 cites·20 claims
- 0399US9627540B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·32 cites·20 claims
- 0499US9601342B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·288 cites·20 claims
- 0599US9583399B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 28, 2017·50 cites·20 claims
- 0699US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0799US9548303B2FinFET devices with unique fin shape and the fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·1.3k cites·20 claims
- 0899US8836016B2Semiconductor structures and methods with high mobility and high energy bandgap materialsWU CHENG-HSIEN·Filed 2012·Granted Sep 16, 2014·538 cites·20 claims
- 0999US8716765B2Contact structure of semiconductor deviceWU CHENG-HSIEN·Filed 2012·Granted May 6, 2014·387 cites·20 claims
- 1099US8183134B2Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfacesWU CHENG-HSIEN·Filed 2011·Granted May 22, 2012·186 cites·18 claims
- 1198US8742509B2Apparatus and method for FinFETsLEE YI-JING·Filed 2012·Granted Jun 3, 2014·188 cites·13 claims
- 1298US8618556B2FinFET design and method of fabricating sameWU CHENG-HSIEN·Filed 2011·Granted Dec 31, 2013·205 cites·18 claims
- 1398US8486770B1Method of forming CMOS FinFET deviceWU CHENG-HSIEN·Filed 2011·Granted Jul 16, 2013·42 cites·20 claims
- 1497US10269965B1Multi-gate semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·15 cites·20 claims
- 1597US8841701B2FinFET device having a channel defined in a diamond-like shape semiconductor structureLIN YOU-RU·Filed 2011·Granted Sep 23, 2014·530 cites·20 claims
- 1697US8815712B2Method for epitaxial re-growth of semiconductor regionWAN CHENG-TIEN·Filed 2012·Granted Aug 26, 2014·477 cites·20 claims
- 1797US8786019B2CMOS FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 22, 2014·31 cites·20 claims
- 1896US10134843B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·9 cites·20 claims
- 1995US11377676B2Methods for seamless nucleic acid assemblyTWIST BIOSCIENCE CORP·Filed 2019·Granted Jul 5, 2022·13 cites·5 claims
- 2095US9985131B2Source/drain profile for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 29, 2018·11 cites·20 claims
- 2195US9780174B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 3, 2017·10 cites·20 claims
- 2295US9677067B2Compositions and methods for synthetic gene assemblyTWIST BIOSCIENCE CORP·Filed 2016·Granted Jun 13, 2017·69 cites·25 claims
- 2395US9159824B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 2494US10002969B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 19, 2018·7 cites·19 claims
- 2593US10522625B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 2693US9595614B2Semiconductor structures and methods with high mobility and high energy bandgap materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 14, 2017·6 cites·20 claims
- 2793US9196709B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·14 cites·19 claims
- 2893US8994002B2FinFET having superlattice stressorLEE YI-JING·Filed 2012·Granted Mar 31, 2015·15 cites·20 claims
- 2993US8969156B2Semiconductor structures and methods with high mobility and high energy bandgap materialsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·8 cites·20 claims
- 3092US10096710B2Method of forming strained structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 3192US9502539B2FINFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 22, 2016·7 cites·20 claims
- 3291US10084069B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·4 cites·20 claims
- 3391US9087902B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 21, 2015·8 cites·20 claims
- 3491US8609517B2MOCVD for growing III-V compound semiconductors on silicon substratesWANN CLEMENT HSINGJEN·Filed 2010·Granted Dec 17, 2013·10 cites·14 claims
- 3590US10797162B2FinFET device having a channel defined in a diamond-like shape semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·3 cites·20 claims
- 3690US10062782B2Method of manufacturing a semiconductor device with multilayered channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·5 cites·20 claims
- 3789US8242540B2Epitaxial growth of III-V compound semiconductors on silicon surfacesWANN CLEMENT HSINGJEN·Filed 2010·Granted Aug 14, 2012·9 cites·20 claims
- 3889US2025311279A1Multi-gate semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3988US11373870B2Method for manufacturing semiconductor device including performing thermal treatment on germanium layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 28, 2022·3 cites·20 claims
- 4087US12457774B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 28, 2025·0 cites·20 claims
- 4187US10504993B2FinFET semiconductor device with germanium diffusion over silicon finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 10, 2019·3 cites·20 claims
- 4287US9748143B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·3 cites·20 claims
- 4387US9601594B2Semiconductor device with enhanced strainWU CHENG-HSIEN·Filed 2011·Granted Mar 21, 2017·9 cites·20 claims
- 4487US9105654B2Source/drain profile for FinFETMA TA-CHUN·Filed 2012·Granted Aug 11, 2015·9 cites·17 claims
- 4586US10269969B2Semiconductor structures and methods with high mobility and high energy bandgap materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 4686US10164023B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 4786US9773889B2Method of semiconductor arrangement formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 26, 2017·5 cites·20 claims
- 4886US9276117B1Structure and method and FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 1, 2016·7 cites·20 claims
- 4986US8759203B2Growing III-V compound semiconductors from trenches filled with intermediate layersWANN CLEMENT HSINGJEN·Filed 2010·Granted Jun 24, 2014·5 cites·10 claims
- 5085US12389654B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
Showing the top 50 of 204 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Cheng-Hsien Wu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →