Inventor · disambiguated record
Chia-Yang Wu
Also filed as: WU CHIA-YANG
17 granted patents·4 pending applications·22 citations·filing 2003–2024
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17IND TECH RES INST1SILICON INTEGRATED SYS CORP1TAINAN SPINNING CO LTD1UNIV NAT CHENG KUNG1
Top patents by PatentIndex Score
21 records- 0191US9947753B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·6 cites·15 claims
- 0288US10629708B2Semiconductor device structure with barrier layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
- 0387US10714576B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 0486US11929328B2Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
- 0583US10886226B2Conductive contact having staircase barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
- 0683US2024379557A1Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0781US12507458B2Semiconductor device with dielectric spacer liner on source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 0881US12046662B2Semiconductor device structure with barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 0980US2024079332A1Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1077US11784240B2Semiconductor device structure with barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 1173US11670704B2Semiconductor device structure with barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 1271US11670690B2Semiconductor device with dielectric spacer liner on source/drain contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 1371US11031488B2Semiconductor device structure with barrier layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 1467US11270888B2Semiconductor device having source/drain with a protrusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 1560US10658186B2Method of forming semiconductor device using titanium-containing layer and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·0 cites·20 claims
- 1658US10163643B2Method of forming semiconductor device using titanium-containing layer and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 1754US6713379B1Method for forming a damascene structureSILICON INTEGRATED SYS CORP·Filed 2003·Granted Mar 30, 2004·6 cites·19 claims
- 1848US12344781B2Carbon nanodot-fluorescent polymer composite, and method for preparing and fiber including the sameTAINAN SPINNING CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·12 claims
- 1942US2014332961A1Cu/CuMn BARRIER LAYER AND FABRICATING METHOD THEREOFUNIV NAT CHENG KUNG·Filed 2013·Application pending·0 cites
- 2041US10763338B2Silicide implantsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 1, 2020·0 cites·20 claims
- 2141US2014151884A1Self-forming barrier structure and semiconductor device having the sameIND TECH RES INST·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →