Inventor · disambiguated record
Ching-Sung Yang
Also filed as: YANG CHING-SUNG
69 granted patents·31 pending applications·1,104 citations·filing 2001–2023
99Inventor score
Files withEMEMORY TECHNOLOGY INC35POWERCHIP SEMICONDUCTOR CORP22PUFSECURITY CORP8LU HAU-YAN7YANG CHING-SUNG5
Top patents by PatentIndex Score
100 records- 0198US6678190B2Single poly embedded epromEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jan 13, 2004·138 cites·12 claims
- 0297US8592886B2Erasable programmable single-ploy nonvolatile memoryHSU TE-HSUN·Filed 2012·Granted Nov 26, 2013·58 cites·26 claims
- 0397US8174063B2Non-volatile semiconductor memory device with intrinsic charge trapping layerLU HAU-YAN·Filed 2009·Granted May 8, 2012·67 cites·5 claims
- 0495US8941167B2Erasable programmable single-ploy nonvolatile memoryCHEN WEI-REN·Filed 2012·Granted Jan 27, 2015·30 cites·20 claims
- 0595US6418060B1Method of programming and erasing non-volatile memory cellsEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jul 9, 2002·101 cites·20 claims
- 0694US8355282B2Logic-based multiple time programming memory cellEMEMORY TECHNOLOGY INC·Filed 2010·Granted Jan 15, 2013·17 cites·10 claims
- 0794US8344445B2Non-volatile semiconductor memory cell with dual functionsEMEMORY TECHNOLOGY INC·Filed 2012·Granted Jan 1, 2013·18 cites·7 claims
- 0893US7436028B2One-time programmable read only memory and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Oct 14, 2008·20 cites·14 claims
- 0991US8599614B2Programming method for NAND flash memory device to reduce electrons in channelsMIIDA TAKASHI·Filed 2009·Granted Dec 3, 2013·28 cites·14 claims
- 1091US6489202B1Structure of an embedded channel write-erase flash memory cell and fabricating method thereofEMEMORY TECHNOLOGY INC·Filed 2001·Granted Dec 3, 2002·44 cites·20 claims
- 1190US10181357B2Code generating apparatus and one time programming blockEMEMORY TECHNOLOGY INC·Filed 2016·Granted Jan 15, 2019·6 cites·2 claims
- 1290US6617637B1Electrically erasable programmable logic deviceEMEMORY TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·57 cites·33 claims
- 1389US8638589B2Operating method for non-volatile memory unitLU HAU-YAN·Filed 2012·Granted Jan 28, 2014·12 cites·12 claims
- 1489US6501685B2Channel write/erase flash memory cell and its manufacturing methodEMEMORY TECHNOLOGY INC·Filed 2002·Granted Dec 31, 2002·43 cites·15 claims
- 1588US11381394B2High speed encryption key generating enginePUFSECURITY CORP·Filed 2020·Granted Jul 5, 2022·2 cites·14 claims
- 1688US6448607B1Nonvolatile memory having embedded word linesEMEMORY TECHNOLOGY INC·Filed 2001·Granted Sep 10, 2002·42 cites·12 claims
- 1788US6441443B1Embedded type flash memory structure and method for operating the sameEMEMORY TECHNOLOGY INC·Filed 2001·Granted Aug 27, 2002·48 cites·7 claims
- 1886US10020268B2Random number generator device and control method thereofEMEMORY TECHNOLOGY INC·Filed 2017·Granted Jul 10, 2018·5 cites·9 claims
- 1985US7397080B2Non-volatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jul 8, 2008·9 cites·9 claims
- 2085US7154142B2Non-volatile memory device and manufacturing method and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Dec 26, 2006·9 cites·19 claims
- 2185US6898126B1Method of programming a flash memory through boosting a voltage level of a source linePOWERCHIP SEMICONDUCTOR CORP·Filed 2003·Granted May 24, 2005·39 cites·15 claims
- 2285US6888190B2EEPROM with source line voltage stabilization mechanismEMEMORY TECHNOLOGY INC·Filed 2003·Granted May 3, 2005·36 cites·15 claims
- 2383US8625350B2Logic-based multiple time programming memory cellCHING WEN-HAO·Filed 2012·Granted Jan 7, 2014·8 cites·15 claims
- 2483US7291882B2Programmable and erasable digital switch device and fabrication method and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Nov 6, 2007·8 cites·37 claims
- 2582US6711064B2Single-poly EEPROMEMEMORY TECHNOLOGY INC·Filed 2002·Granted Mar 23, 2004·31 cites·9 claims
- 2681US8681528B2One-bit memory cell for nonvolatile memory and associated controlling methodWU MENG-YI·Filed 2012·Granted Mar 25, 2014·10 cites·24 claims
- 2781US6654284B2Channel write/erase flash memory cell and its manufacturing methodEMEMORY TECHNOLOGY INC·Filed 2002·Granted Nov 25, 2003·23 cites·8 claims
- 2881US6504763B1Nonvolatile semiconductor memory capable of random programmingEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jan 7, 2003·22 cites·14 claims
- 2980US7391078B2Non-volatile memory and manufacturing and operating method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Jun 24, 2008·5 cites·8 claims
- 3079US8724363B2Anti-fuse memory ultilizing a coupling channel and operating method thereofLU HAU-YAN·Filed 2012·Granted May 13, 2014·5 cites·8 claims
- 3179US6717206B2Structure of an embedded channel write/erase flash memory cell and fabricating method thereofEMEMORY TECHNOLOGY INC·Filed 2002·Granted Apr 6, 2004·17 cites·13 claims
- 3275US9638549B2Integrated capacitance sensing module and associated systemEMEMORY TECHNOLOGY INC·Filed 2015·Granted May 2, 2017·3 cites·18 claims
- 3375US8390056B2Non-volatile semiconductor memory device with intrinsic charge trapping layerLU HAU-YAN·Filed 2011·Granted Mar 5, 2013·3 cites·6 claims
- 3474US8363475B2Non-volatile memory unit cell with improved sensing margin and reliabilityEMEMORY TECHNOLOGY INC·Filed 2010·Granted Jan 29, 2013·3 cites·9 claims
- 3574US6490196B1Method for operating a nonvolatile memory having embedded word linesEMEMORY TECHNOLOGY INC·Filed 2002·Granted Dec 3, 2002·17 cites·4 claims
- 3673US6847087B2Bi-directional Fowler-Nordheim tunneling flash memoryEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jan 25, 2005·20 cites·21 claims
- 3772US6677198B2Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereofEMEMORY TECHNOLOGY INC·Filed 2002·Granted Jan 13, 2004·14 cites·5 claims
- 3870US7491607B2Method of fabricating flash memory cellPOWERCHIP SEMICONDUCTOR CORP·Filed 2007·Granted Feb 17, 2009·3 cites·7 claims
- 3969US8456916B2Non-volatile memory unit cell with improved sensing margin and reliabilityCHEN HSIN-MING·Filed 2012·Granted Jun 4, 2013·2 cites·5 claims
- 4068US8705289B2Flash memory apparatus with programming voltage control generatorsYANG CHING-SUNG·Filed 2012·Granted Apr 22, 2014·5 cites·21 claims
- 4167US12113895B2Key management system providing secure management of cryptographic keys, and methods of operating the samePUFSECURITY CORP·Filed 2021·Granted Oct 8, 2024·0 cites·7 claims
- 4267US11736286B2Method and secure boot control circuit for controlling secure boot of electronic device and method for controlling enrollment of electronic devicePUFSECURITY CORP·Filed 2021·Granted Aug 22, 2023·0 cites·15 claims
- 4367US10476680B2Electronic device with self-protection and anti-cloning capabilities and related methodEMEMORY TECHNOLOGY INC·Filed 2017·Granted Nov 12, 2019·1 cites·16 claims
- 4465US7937072B2Mobile phone accessing system and related storage devicePOWERFLASH TECHNOLOGY CORP·Filed 2008·Granted May 3, 2011·3 cites·7 claims
- 4565US7452775B2Non-volatile memory device and manufacturing method and operating method thereofPOWERSHIP SEMICONDUCTOR CORP·Filed 2006·Granted Nov 18, 2008·2 cites·7 claims
- 4664US9214242B2Programming method for NAND flash memory device to reduce electrons in channelsPowerchip Corp·Filed 2013·Granted Dec 15, 2015·3 cites·34 claims
- 4764US8604538B2Non-volatile semiconductor memory device with intrinsic charge trapping layerEMEMORY TECHNOLOGY INC·Filed 2012·Granted Dec 10, 2013·1 cites·1 claims
- 4863US7462902B2Nonvolatile memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Dec 9, 2008·2 cites·11 claims
- 4962US7663904B2Operating method of one-time programmable read only memoryPOWERCHIP SEMICONDUCTOR CORP·Filed 2008·Granted Feb 16, 2010·1 cites·7 claims
- 5061US6882574B2Single poly UV-erasable programmable read only memoryEMEMORY TECHNOLOGY INC·Filed 2003·Granted Apr 19, 2005·11 cites·9 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ching-Sung Yang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →