Inventor · disambiguated record
Chengyue Yang
Also filed as: YANG CHENGYUE
5 granted patents·1 citations·filing 2015–2019
60Inventor score
Files withINST OF MICROELECTRONICS CAS5
Top patents by PatentIndex Score
5 records- 0154US10680067B2Silicon carbide MOSFET device and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2015·Granted Jun 9, 2020·1 cites·11 claims
- 0243US10699898B2Method for oxidizing a silicon carbide based on microwave plasma at an AC voltageINST OF MICROELECTRONICS CAS·Filed 2019·Granted Jun 30, 2020·0 cites·8 claims
- 0342US10763105B2Method for manufacturing grooved MOSFET device based on two-step microwave plasma oxidationINST OF MICROELECTRONICS CAS·Filed 2018·Granted Sep 1, 2020·0 cites·8 claims
- 0441US11508809B2Semiconductor device and preparation method thereofINST OF MICROELECTRONICS CAS·Filed 2018·Granted Nov 22, 2022·0 cites·11 claims
- 0541US10734199B2Microwave plasma generating device for plasma oxidation of SiCINST OF MICROELECTRONICS CAS·Filed 2018·Granted Aug 4, 2020·0 cites·10 claims
Join the waitlist — get patent alerts
Get an alert when Chengyue Yang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →