Inventor · disambiguated record
Chang-Ta Yang
Also filed as: YANG CHANG-TA
39 granted patents·6 pending applications·559 citations·filing 2003–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD36CHANG FENG-MING4TAIWAN SEMICONDUCTOR MFG3WANG PING-WEI1YANG LIE-YONG1
Top patents by PatentIndex Score
45 records- 0198US11710663B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·5 cites·20 claims
- 0298US8004042B2Static random access memory (SRAM) cell and method for forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 23, 2011·183 cites·17 claims
- 0398US6924560B2Compact SRAM cell with FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 2, 2005·180 cites·20 claims
- 0497US11462282B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·7 cites·20 claims
- 0597US9620509B1Static random access memory device with vertical FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·30 cites·20 claims
- 0696US10943827B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 9, 2021·3 cites·20 claims
- 0796US8294212B2Methods and apparatus for SRAM bit cell with low standby current, low supply voltage and high speedWANG PING-WEI·Filed 2010·Granted Oct 23, 2012·84 cites·18 claims
- 0895US12080602B2Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·1 cites·20 claims
- 0995US8315085B1SRAM timing tracking circuitCHANG FENG-MING·Filed 2011·Granted Nov 20, 2012·36 cites·20 claims
- 1092US11056594B2Semiconductor device having fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 6, 2021·2 cites·20 claims
- 1190US11355499B2Static random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 7, 2022·4 cites·20 claims
- 1289US12380958B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1389US10727343B2Semiconductor device having fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·3 cites·20 claims
- 1489US2025316320A1Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1587US2024363419A1Semiconductor device with fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1686US12463087B2FinFET circuit devices with well isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1786US12376277B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1884US12142684B2Cut metal gate in memory macro edge and middle strapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 1984US10515969B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 24, 2019·3 cites·20 claims
- 2084US2024347637A1Method for manufacturing semiconductor device having fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2184US2024379851A1Cut metal gate in memory macro edge and middle strapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2282US8492215B2Static random access memory (SRAM) cell and method for forming sameYANG LIE-YONG·Filed 2011·Granted Jul 23, 2013·6 cites·20 claims
- 2380US11942169B2Semiconductor memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 2480US8766376B2Static random access memory (SRAM) cell and method for forming sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 1, 2014·4 cites·20 claims
- 2580US2025261356A1Well pick-up region design for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2679US11856745B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2779US11264268B2FinFET circuit devices with well isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·1 cites·20 claims
- 2879US11043595B2Cut metal gate in memory macro edge and middle strapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·1 cites·20 claims
- 2978US12274045B2Well pick-up region design for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 3078US11948829B2FinFET circuit devices with well isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3178US10658242B2Structure and formation method of semiconductor device with Fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·1 cites·20 claims
- 3277US11121078B2SRAM having irregularly shaped metal linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·2 cites·20 claims
- 3376US12057505B2Semiconductor device having fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·20 claims
- 3476US11910585B2Well pick-up region design for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 3575US11864368B2Static random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 3675US11728432B2Cut metal gate in memory macro edge and middle strapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3772US11621267B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 4, 2023·0 cites·20 claims
- 3872US11387240B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 3970US8642451B2Active region patterning in double patterning processesCHANG FENG-MING·Filed 2010·Granted Feb 4, 2014·3 cites·20 claims
- 4065US11641729B2Manufacturing method of static random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 2, 2023·0 cites·20 claims
- 4152US10651178B2Compact electrical connection that can be used to form an SRAM cell and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·19 claims
- 4250US10083970B2Static random access memory device with vertical FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·0 cites·20 claims
- 4349US11600623B2Well pick-up region design for improving memory macro performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 7, 2023·0 cites·20 claims
- 4438US9152039B2Multiple patterning technology method and system for achieving minimal pattern mismatchCHANG FENG-MING·Filed 2011·Granted Oct 6, 2015·0 cites·16 claims
- 4535US2012120703A1Memory device with asymmetrical bit cell arrays and balanced resistance and capacitanceCHANG FENG-MING·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →