Inventor · disambiguated record
Chung-I Yang
Also filed as: YANG CHUNG-I
9 granted patents·9 pending applications·1 citations·filing 2017–2025
78Inventor score
Top patents by PatentIndex Score
18 records- 0186US12218214B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 4, 2025·1 cites·20 claims
- 0285US12317526B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 0384US2025324719A1Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0483US2025287633A1Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0581US2025366042A1Gate-all-around devices and methods for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0680US12396240B2Source/drain silicide for multigate device performance and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 0780US12230712B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 0878US2025194141A1Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0976US11949001B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 1076US11735665B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1173US2025311301A1Gate-all-around devices and methods for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1271US11404576B2Dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 1370US11282943B2Multi-gate devices and fabricating the same with etch rate modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·16 claims
- 1457US2025151357A1Semiconductor fabrication processes for defect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1554US2024154015A1Semiconductor device with backside interconnection and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1653US2024113201A1Multi-gate device inner spacer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1751US2024038866A1Semiconductor device structure with nanostructure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1844US10045414B1Method and apparatus for increasing luminous intensity of an ultraviolet light emitting diodeNATIONAL SUN YAT SEN UNIVERSITY·Filed 2017·Granted Aug 7, 2018·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →