Inventor · disambiguated record
Chin-Chieh Yang
Also filed as: YANG CHIN-CHIEH
83 granted patents·2 pending applications·534 citations·filing 2012–2025
99Inventor score
Top patents by PatentIndex Score
85 records- 0199US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
- 0299US9601545B1Series MIM structures compatible with RRAM processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·61 cites·20 claims
- 0399US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
- 0498US9553265B1RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·33 cites·20 claims
- 0598US9431604B2Resistive random access memory (RRAM) and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Aug 30, 2016·29 cites·20 claims
- 0698US9231197B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·23 cites·20 claims
- 0798US9023699B2Resistive random access memory (RRAM) structure and method of making the RRAM structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 5, 2015·21 cites·20 claims
- 0898US8963114B2One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·32 cites·11 claims
- 0997US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
- 1097US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
- 1196US10504963B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·13 cites·20 claims
- 1296US9099647B2One transistor and one resistive (1T1R) random access memory (RAM) structure with dual spacersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Aug 4, 2015·16 cites·20 claims
- 1394US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 1494US10163981B2Metal landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·8 cites·20 claims
- 1594US9647207B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
- 1693US9537094B2Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·6 cites·20 claims
- 1793US8921818B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 30, 2014·10 cites·20 claims
- 1893US8742390B1Logic compatible RRAM structure and processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 3, 2014·15 cites·20 claims
- 1992US9780302B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 2092US9112148B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·20 claims
- 2191US11751405B2Integrated circuit and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 5, 2023·2 cites·20 claims
- 2291US9312482B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 12, 2016·9 cites·20 claims
- 2390US10038139B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·6 cites·20 claims
- 2490US9780145B2Resistive random access memory (RRAM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 2590US9466794B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 11, 2016·6 cites·20 claims
- 2690US9231205B2Low form voltage resistive random access memory (RRAM)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 5, 2016·6 cites·18 claims
- 2789US11751485B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 2889US9478638B2Resistive switching random access memory with asymmetric source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 25, 2016·6 cites·20 claims
- 2989US9331277B2One transistor and one resistive random access memory (RRAM) structure with spacerTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 3, 2016·6 cites·20 claims
- 3089US9076522B2Memory cells breakdown protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·12 cites·19 claims
- 3188US10622300B2Series MIM structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 14, 2020·3 cites·13 claims
- 3287US9941470B2RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·4 cites·20 claims
- 3387US9673391B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·5 cites·20 claims
- 3486US11201190B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·3 cites·20 claims
- 3586US9349953B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·6 cites·20 claims
- 3685US11094744B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·2 cites·20 claims
- 3785US10903274B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 26, 2021·2 cites·20 claims
- 3885US10050197B2Resistance variable memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·4 cites·20 claims
- 3984US12232333B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 4082US9444045B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·2 cites·20 claims
- 4182US9236570B2Resistive memory cell array with top electrode bit lineTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 12, 2016·3 cites·20 claims
- 4281US10862029B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 4381US9934853B2Method and apparatus for reading RRAM cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·4 cites·20 claims
- 4480US12075634B2RRAM memory cell with multiple filamentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
- 4580US11856797B2Resistive switching random access memory with asymmetric source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4679US9368722B2Resistive random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 14, 2016·3 cites·11 claims
- 4778US9876167B2High yield RRAM cell with optimized film schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·2 cites·20 claims
- 4876US11889705B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 4976US11844286B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 5076US10566387B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·1 cites·20 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →