Inventor · disambiguated record
Chang-Jip Yang
Also filed as: YANG CHANG-JIP
12 granted patents·204 citations·filing 1993–2003
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD12
Top patents by PatentIndex Score
12 records- 0177US6074486AApparatus and method for manufacturing a semiconductor device having hemispherical grainsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 13, 2000·53 cites·20 claims
- 0274US6953739B2Method for manufacturing a semiconductor device having hemispherical grains at very low atmospheric pressure using first, second, and third vacuum pumpsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 11, 2005·17 cites·13 claims
- 0368US5821152AMethods of forming hemispherical grained silicon electrodes including multiple temperature stepsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 13, 1998·29 cites·24 claims
- 0465US6673673B1Method for manufacturing a semiconductor device having hemispherical grainsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 6, 2004·11 cites·12 claims
- 0554US6036781AApparatus for guiding air current in a wafer loading chamber for chemical vapor deposition equipmentSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 14, 2000·24 cites·8 claims
- 0648US6312987B1Method for manufacturing semiconductor device having hemispherical grain polysilicon filmSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 6, 2001·15 cites·18 claims
- 0747US5352293ATube apparatus for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Oct 4, 1994·10 cites·7 claims
- 0845US6090188AAir intake apparatus of chemical vapor deposition equipment and method for removing ozone using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 18, 2000·18 cites·9 claims
- 0938US6323084B1Semiconductor device capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 27, 2001·9 cites·12 claims
- 1036US5470611AMethod for forming an oxide film of a semiconductorSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Nov 28, 1995·11 cites·4 claims
- 1128US6683010B1Method for forming silicon-oxynitride layer on semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 27, 2004·5 cites·15 claims
- 1227US6423998B1Semiconductor device capacitor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 23, 2002·2 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →