Inventor · disambiguated record
Ching Ju Yang
Also filed as: YANG CHING JU
6 granted patents·7 pending applications·6 citations·filing 2020–2025
75Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0194US11887929B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·2 cites·20 claims
- 0291US11495532B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·2 cites·20 claims
- 0388US12150394B2Memory device structure for reducing thermal crosstalkTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·1 cites·20 claims
- 0483US12266604B2Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 0581US11637240B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·1 cites·20 claims
- 0678US2025246538A1Techniques to inhibit delamination from flowable gap-fill dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0775US2025351700A1Defect Reduction Through Scheme Of Conductive Pad Layer And Capping LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0874US12161057B2Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 0974US2025323199A1Bond pad for reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1073US2024381797A1Memory device structure for reducing thermal crosstalkTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1170US2025087609A1Bond pad for reduced contact resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1262US2023345786A1Defect Reduction Through Scheme Of Conductive Pad Layer And Capping LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1355US2025228143A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →