Inventor · disambiguated record
Chien Ning Yao
Also filed as: YAO CHIEN-NING
47 granted patents·38 pending applications·51 citations·filing 2019–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD85
Top patents by PatentIndex Score
85 records- 0199US11227956B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·11 cites·20 claims
- 0298US11189706B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·5 cites·20 claims
- 0397US12342616B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·2 cites·20 claims
- 0497US11990529B2Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 0597US11967594B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0697US11791421B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·3 cites·20 claims
- 0797US11450663B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 0897US11417750B2Gate air spacer for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·4 cites·20 claims
- 0996US11735641B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 1096US11670718B2Semiconductor device structure with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 6, 2023·2 cites·20 claims
- 1196US11502183B2Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·3 cites·20 claims
- 1295US11916122B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
- 1394US12074204B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·2 cites·20 claims
- 1490US11309424B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 1589US2025359190A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1688US12342587B2Integrated circuit with nanostructure transistors and bottom dielectric insulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·1 cites·20 claims
- 1788US12317540B2Method for manufacturing semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 1888US11710774B2Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
- 1988US2025311419A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2087US2025359145A1Semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2187US2025311374A1Finfet structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2287US2025359297A1Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2386US12300735B2Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2486US2025351580A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2585US11929287B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
- 2683US12457798B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 2783US12433008B2FinFET structure with airgap and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 2883US12376348B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 2983US12125922B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 3083US2024372010A1Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3182US12300732B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 3282US12272732B2Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3382US11444202B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·1 cites·20 claims
- 3481US12446319B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 3581US12211922B2Gate air spacer for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 3681US11996482B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 3781US2025261405A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3881US2025275222A1Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3981US2025366031A1Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4081US2025366139A1Spacer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4180US12166129B2Semiconductor device structure with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 4280US2025359257A1Spacer structures and contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4380US2025359254A1Field effect transistor with narrowed spacer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4479US12107169B2Contact structure for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 4579US2025344472A1Transistor source/drain regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4679US2025351482A1Semiconductor Device Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4779US2025234582A1Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4879US2025248069A1Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4979US2024379855A1Contact structure for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5078US11784252B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →