Inventor · disambiguated record
Choh Fei Yeap
Also filed as: YEAP CHOH FEI
90 granted patents·44 pending applications·459 citations·filing 2001–2025
99Inventor score
Files withQUALCOMM INC99TAIWAN SEMICONDUCTOR MFG CO LTD20FREESCALE SEMICONDUCTOR INC8CHEN JIAN2MOTOROLA INC2
Top patents by PatentIndex Score
134 records- 0199US11411100B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·7 cites·20 claims
- 0297US9793164B2Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devicesQUALCOMM INC·Filed 2015·Granted Oct 17, 2017·23 cites·19 claims
- 0396US9871121B2Semiconductor device having a gap defined thereinQUALCOMM INC·Filed 2014·Granted Jan 16, 2018·25 cites·16 claims
- 0495US9799560B2Self-aligned structureQUALCOMM INC·Filed 2015·Granted Oct 24, 2017·13 cites·40 claims
- 0595US9524972B2Metal layers for a three-port bit cellQUALCOMM INC·Filed 2015·Granted Dec 20, 2016·10 cites·8 claims
- 0694US10354912B2Forming self-aligned vertical interconnect accesses (VIAs) in interconnect structures for integrated circuits (ICs)QUALCOMM INC·Filed 2016·Granted Jul 16, 2019·12 cites·14 claims
- 0794US9257556B2Silicon germanium FinFET formation by Ge condensationQUALCOMM INC·Filed 2014·Granted Feb 9, 2016·19 cites·26 claims
- 0893US9543248B2Integrated circuit devices and methodsQUALCOMM INC·Filed 2015·Granted Jan 10, 2017·8 cites·20 claims
- 0993US6864135B2Semiconductor fabrication process using transistor spacers of differing widthsFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Mar 8, 2005·82 cites·19 claims
- 1092US10439039B2Integrated circuits including a FinFET and a nanostructure FETQUALCOMM INC·Filed 2016·Granted Oct 8, 2019·8 cites·30 claims
- 1192US9953979B2Contact wrap around structureQUALCOMM INC·Filed 2015·Granted Apr 24, 2018·8 cites·14 claims
- 1291US9824936B2Adjacent device isolationQUALCOMM INC·Filed 2016·Granted Nov 21, 2017·6 cites·10 claims
- 1391US9379058B2Grounding dummy gate in scaled layout designQUALCOMM INC·Filed 2014·Granted Jun 28, 2016·13 cites·15 claims
- 1491US9343357B2Selective conductive barrier layer formationQUALCOMM INC·Filed 2014·Granted May 17, 2016·10 cites·16 claims
- 1591US2025358996A1Macro and sram bit cell cooptimizatoin for performance (long/shortwordline combo sram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1690US9786356B2Memory device with adaptive voltage scaling based on error informationQUALCOMM INC·Filed 2015·Granted Oct 10, 2017·12 cites·30 claims
- 1789US12040383B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·1 cites·20 claims
- 1888US12499933B2SRAM structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 1988US9721891B2Integrated circuit devices and methodsQUALCOMM INC·Filed 2016·Granted Aug 1, 2017·3 cites·20 claims
- 2088US9691868B2Merging lithography processes for gate patterningQUALCOMM INC·Filed 2014·Granted Jun 27, 2017·9 cites·11 claims
- 2188US9583178B2SRAM read preferred bit cell with write assist circuitQUALCOMM INC·Filed 2013·Granted Feb 28, 2017·12 cites·18 claims
- 2288US9536596B2Three-port bit cell having increased widthQUALCOMM INC·Filed 2014·Granted Jan 3, 2017·8 cites·20 claims
- 2388US9336863B2Dual write wordline memory cellQUALCOMM INC·Filed 2014·Granted May 10, 2016·11 cites·30 claims
- 2487US9502414B2Adjacent device isolationQUALCOMM INC·Filed 2015·Granted Nov 22, 2016·4 cites·18 claims
- 2586US9111635B2Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methodsQUALCOMM INC·Filed 2013·Granted Aug 18, 2015·8 cites·19 claims
- 2685US12363937B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2785US11393831B2Optimized static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 2884US12426226B2Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 2984US10157992B2Nanowire device with reduced parasiticsQUALCOMM INC·Filed 2015·Granted Dec 18, 2018·3 cites·7 claims
- 3084US10043796B2Vertically stacked nanowire field effect transistorsQUALCOMM INC·Filed 2016·Granted Aug 7, 2018·4 cites·33 claims
- 3184US9941154B2Reverse self aligned double patterning process for back end of line fabrication of a semiconductor deviceQUALCOMM INC·Filed 2016·Granted Apr 10, 2018·3 cites·15 claims
- 3284US2025344447A1Device and method of fabricating multigate devices having different channel configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3383US9922880B2Method and apparatus of multi threshold voltage CMOSQUALCOMM INC·Filed 2014·Granted Mar 20, 2018·4 cites·16 claims
- 3483US2025301684A1Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3581US10032678B2Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devicesQUALCOMM INC·Filed 2016·Granted Jul 24, 2018·3 cites·29 claims
- 3681US2025359172A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3780US8799847B1Methods for designing fin-based field effect transistors (FinFETS)QUALCOMM INC·Filed 2013·Granted Aug 5, 2014·5 cites·19 claims
- 3879US12016169B2Optimized static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·18 claims
- 3978US10163792B2Semiconductor device having an airgap defined at least partially by a protective structureQUALCOMM INC·Filed 2014·Granted Dec 25, 2018·3 cites·30 claims
- 4078US9455026B2Shared global read and write word linesQUALCOMM INC·Filed 2014·Granted Sep 27, 2016·4 cites·30 claims
- 4178US9306066B2Method and apparatus of stressed FIN NMOS FinFETQUALCOMM INC·Filed 2014·Granted Apr 5, 2016·3 cites·25 claims
- 4278US2024379802A1Device and method of fabricating multigate devices having different channel configurationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4377US6979627B2Isolation trenchFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Dec 27, 2005·27 cites·24 claims
- 4476US9252147B2Methods and apparatuses for forming multiple radio frequency (RF) components associated with different RF bands on a chipQUALCOMM INC·Filed 2013·Granted Feb 2, 2016·3 cites·25 claims
- 4575US12027202B2SRAM structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 4675US9594864B2Method for asymmetrical geometrical scalingQUALCOMM INC·Filed 2015·Granted Mar 14, 2017·2 cites·31 claims
- 4774US10497625B2Method and apparatus of multi threshold voltage CMOSQUALCOMM INC·Filed 2018·Granted Dec 3, 2019·1 cites·6 claims
- 4874US10141317B2Metal layers for a three-port bit cellQUALCOMM INC·Filed 2016·Granted Nov 27, 2018·1 cites·17 claims
- 4974US9806083B2Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methodsQUALCOMM INC·Filed 2014·Granted Oct 31, 2017·3 cites·28 claims
- 5074US9564361B2Reverse self aligned double patterning process for back end of line fabrication of a semiconductor deviceQUALCOMM INC·Filed 2013·Granted Feb 7, 2017·2 cites·33 claims
Showing the top 50 of 134 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →