Inventor · disambiguated record
Chun-Hsu Yen
Also filed as: YEN CHUN-HSU
11 granted patents·20 citations·filing 2015–2024
86Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11
Top patents by PatentIndex Score
11 records- 0196US11410878B2Semiconductor device with contact pad and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·4 cites·20 claims
- 0295US10923391B2Semiconductor device with contact padTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 16, 2021·4 cites·20 claims
- 0389US12408570B2Phase change random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 0489US10553479B2Semiconductor device with contact pad and fabrication method thereforeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·5 cites·20 claims
- 0585US12089513B2Phase change random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 0685US11233197B2Phase change random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·4 cites·20 claims
- 0777US11765988B2Phase change random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 0876US11784089B2Semiconductor device with contact pad and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 0974US10510954B2Phase change random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·2 cites·17 claims
- 1062US9978634B2Method for fabricating shallow trench isolation and semiconductor structure using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·1 cites·20 claims
- 1149US11201122B2Method of fabricating semiconductor device with reduced warpage and better trench filling performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 14, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →