Inventor · disambiguated record
Chul-Woo Yi
Also filed as: YI CHUL-WOO
10 granted patents·193 citations·filing 1997–2013
89Inventor score
Top patents by PatentIndex Score
10 records- 0194US6240039B1Semiconductor memory device and driving signal generator thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 29, 2001·99 cites·20 claims
- 0283US8891324B2Memory device from which dummy edge memory block is removedYI CHUL-WOO·Filed 2013·Granted Nov 18, 2014·8 cites·11 claims
- 0381US7768853B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 3, 2010·10 cites·22 claims
- 0477US8482951B2Memory device from which dummy edge memory block is removedYI CHUL-WOO·Filed 2011·Granted Jul 9, 2013·6 cites·12 claims
- 0577US5933382ASemiconductor memory device including a redundant memory cell circuit which can reduce a peak current generated in a redundant fuse boxSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 3, 1999·43 cites·3 claims
- 0670US7447088B2Semiconductor memory device having an open bit line structure, and method of testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 4, 2008·7 cites·19 claims
- 0763US7869239B2Layout structure of bit line sense amplifiers for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·4 cites·15 claims
- 0851US5901055AInternal boosted voltage generator of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted May 4, 1999·14 cites·9 claims
- 0950US8310853B2Layout structure of bit line sense amplifiers for a semiconductor memory deviceMIN YOUNG-SUN·Filed 2011·Granted Nov 13, 2012·1 cites·23 claims
- 1031US6215715B1Integrated circuit memories including fuses between a decoder and a memory array for disabling defective storage cells in the memory arraySAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 10, 2001·1 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →