Inventor · disambiguated record
Chung-Yi Yu
Also filed as: YU CHUNG-YI
163 granted patents·42 pending applications·861 citations·filing 2002–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD137TAIWAN SEMICONDUCTOR MFG39CHEN CHI-MING12CHEN CHIH-MING3LIU MARTIN2
Top patents by PatentIndex Score
205 records- 0198US8476146B2Reducing wafer distortion through a low CTE layerCHEN CHI-MING·Filed 2010·Granted Jul 2, 2013·134 cites·20 claims
- 0297US11862612B23D trench capacitor for integrated passive devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·4 cites·20 claims
- 0397US11211362B23D trench capacitor for integrated passive devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·6 cites·20 claims
- 0497US10861896B2Capping structure to reduce dark current in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 8, 2020·7 cites·20 claims
- 0596US11784204B2Enhanced trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 10, 2023·4 cites·20 claims
- 0696US11387748B2Self-aligned dielectric liner structure for protection in MEMS comb actuatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
- 0796US8866192B1Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 21, 2014·29 cites·20 claims
- 0896US8803158B1High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·24 cites·20 claims
- 0996US8624326B2FinFET device and method of manufacturing sameCHEN CHI-MING·Filed 2011·Granted Jan 7, 2014·29 cites·20 claims
- 1095US11932534B2MEMS device having a metallization structure embedded in a dielectric structure with laterally offset sidewalls of a first portion and a second portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·2 cites·20 claims
- 1195US11923237B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·2 cites·20 claims
- 1295US6969899B2Image sensor with light guidesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Nov 29, 2005·82 cites·14 claims
- 1394US11916022B2Photolithography alignment process for bonded wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 1493US10014402B1High electron mobility transistor (HEMT) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 3, 2018·9 cites·20 claims
- 1593US9142407B2Semiconductor structure having sets of III-V compound layers and method of forming the sameCHEN CHI-MING·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 1693US7935994B2Light shield for CMOS imagerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 3, 2011·17 cites·20 claims
- 1792US9660063B2Semiconductor structure having sets of III-V compound layers and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·5 cites·20 claims
- 1892US9368610B2High electron mobility transistor with indium nitride layerTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·6 cites·20 claims
- 1992US9099388B2III-V multi-channel FinFETsLIN HUNG-TA·Filed 2011·Granted Aug 4, 2015·13 cites·17 claims
- 2092US8912570B2High electron mobility transistor and method of forming the sameCHIANG CHEN-HAO·Filed 2012·Granted Dec 16, 2014·21 cites·18 claims
- 2192US8878318B2Structure and method for a MRAM device with an oxygen absorbing cap layerCHEN CHIH-MING·Filed 2011·Granted Nov 4, 2014·16 cites·20 claims
- 2292US7153744B2Method of forming self-aligned poly for embedded flashTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 26, 2006·72 cites·24 claims
- 2391US11222849B2Substrate loss reduction for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·2 cites·20 claims
- 2491US11152455B2Method to reduce breakdown failure in a MIM capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·4 cites·20 claims
- 2591US9233844B2Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrateCHEN CHI-MING·Filed 2012·Granted Jan 12, 2016·12 cites·20 claims
- 2691US9209190B2Deep trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 8, 2015·13 cites·20 claims
- 2791US9184041B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 10, 2015·9 cites·18 claims
- 2890US11594593B2Method to reduce breakdown failure in a MIM capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·20 claims
- 2990US11515408B2Rough buffer layer for group III-V devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
- 3090US10468486B2SOI substrate, semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·5 cites·20 claims
- 3190US9245991B2Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 26, 2016·8 cites·20 claims
- 3290US8895992B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·8 cites·19 claims
- 3390US8383440B2Light shield for CMOS imagerTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·5 cites·20 claims
- 3490US7544982B2Image sensor device suitable for use with logic-embedded CIS chips and methods for making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 9, 2009·13 cites·22 claims
- 3590US2025344418A1Method to reduce breakdown failure in a mim capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3690US2025344432A1Rough buffer layer for group iii-v devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3789US9525054B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 20, 2016·8 cites·20 claims
- 3889US8901609B1Transistor having doped substrate and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·12 cites·20 claims
- 3988US10833026B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·3 cites·20 claims
- 4088US10276513B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·4 cites·20 claims
- 4188US8809179B2Method for reducing topography of non-volatile memory and resulting memory cellsWANG SHIH WEI·Filed 2007·Granted Aug 19, 2014·15 cites·20 claims
- 4288US7638852B2Method of making wafer structure for backside illuminated color image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 29, 2009·13 cites·6 claims
- 4388US7326588B2Image sensor with light guidesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 5, 2008·9 cites·27 claims
- 4488US2025366108A1Diffusion barrier layer for source and drain structures to increase transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4587US11594413B2Semiconductor structure having sets of III-V compound layers and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 4687US9646938B2Integrated circuit with backside structures to reduce substrate warpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·4 cites·20 claims
- 4787US2024379724A1Capping structure to reduce dark current in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4886US11832520B2Voltage breakdown uniformity in piezoelectric structure for piezoelectric devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·1 cites·20 claims
- 4986US8969882B1Transistor having an ohmic contact by screen layer and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·6 cites·20 claims
- 5086US7667261B2Split-gate memory cells and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 23, 2010·9 cites·18 claims
Showing the top 50 of 205 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →