Inventor · disambiguated record

Chia-Ta Yu

Also filed as: YU CHIA-TA

44 granted patents·11 pending applications·96 citations·filing 2015–2025

97Inventor score

Technology areasH10P H10D H10W H01L G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD55

Top patents by PatentIndex Score

55 records

0198US11616142B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·4 cites·20 claims
0298US11238904B1Using embedded switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·6 cites·20 claims
0397US11856743B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
0497US11600520B2Air gaps in memory array structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·3 cites·20 claims
0596US10141231B1FinFET device with wrapped-around epitaxial structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·13 cites·20 claims
0695US11195951B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·8 cites·20 claims
0795US10483266B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·9 cites·20 claims
0895US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
0994US11942177B2Using embedded switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
1094US10529725B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·6 cites·20 claims
1193US11437469B2Reducing parasitic capacitance in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·3 cites·20 claims
1292US10985167B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·4 cites·20 claims
1392US10529803B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·7 cites·20 claims
1489US9449882B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·5 cites·20 claims
1588US2025322854A1Using embedded switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1687US12408315B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
1786US10515896B2Interconnect structure for semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·3 cites·19 claims
1886US2025344370A1Vertical dram structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1985US11901415B2Transistor isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
2084US12356647B2Epitaxial structures for fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
2183US12136673B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
2283US9865595B1FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·3 cites·20 claims
2382US12361981B2Using embedded switches for reducing capacitive loading on a memory systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
2482US11450733B2Three dimensional metal insulator metal capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 20, 2022·2 cites·20 claims
2582US10680084B2Epitaxial structures for fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
2681US12402379B2Epitaxial layer under a gate structure of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
2781US2024389347A1Three dimensional memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2880US11824121B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 21, 2023·0 cites·20 claims
2980US2025318224A1Epitaxial layer under a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3079US10163728B2Semiconductor device having a stacked fin structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·2 cites·20 claims
3179US2024363681A1Three dimensional metal insulator metal capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3279US2024389304A1Vertical dram structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3377US12087811B2Three dimensional metal insulator metal capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
3477US2025169159A1FINFET Device with Wrapped-Around Epitaxial Structure and Manufacturing Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3576US12087621B2Air gaps in memory array structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
3676US10777504B2Interconnect structure for semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 15, 2020·1 cites·19 claims
3775US11735648B2Epitaxial structures for fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
3875US2025318139A1Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3974US2024379673A1Gate isolation features and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4073US12302553B2Vertical DRAM structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
4172US12237231B2FINFET device with wrapped-around epitaxial structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·0 cites·20 claims
4272US12137570B2Three dimensional memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 5, 2024·0 cites·20 claims
4372US11018245B2Epitaxial structures for fin-like field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·0 cites·20 claims
4471US11881507B2Reducing parasitic capacitance in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
4569US12349363B2Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
4668US11133229B2Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 28, 2021·0 cites·20 claims
4767US11735471B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
4866US11610841B2Interconnect structure for semiconductor device and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 21, 2023·0 cites·20 claims
4963US2024404875A1Air gaps in memory array structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5062US11062957B2FinFET device with wrapped-around epitaxial structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 13, 2021·0 cites·20 claims

Showing the top 50 of 55 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →