Inventor · disambiguated record
Cheng-Guan Yuan
Also filed as: YUAN CHENG · YUAN CHENG GUAN
7 granted patents·3 pending applications·9 citations·filing 2008–2023
74Inventor score
Files withWIN SEMICONDUCTORS CORP6YUAN CHENG-GUAN2VALEO EAUTOMOTIVE SHENZHEN CO LTD1WIN SEMICONDUCTOR CORP1
Top patents by PatentIndex Score
10 records- 0177US9064704B2Integrated circuits with ESD protection devicesWIN SEMICONDUCTORS CORP·Filed 2013·Granted Jun 23, 2015·5 cites·20 claims
- 0268US8970998B2Compound semiconductor ESD protection devicesWIN SEMICONDUCTOR CORP·Filed 2012·Granted Mar 3, 2015·3 cites·45 claims
- 0350US8987781B2Structure of heterojunction field effect transistor and a fabrication method thereofYUAN CHENG-GUAN·Filed 2011·Granted Mar 24, 2015·1 cites·12 claims
- 0445US2024048054A1Transformer, dc-dc converter and vehicleVALEO EAUTOMOTIVE SHENZHEN CO LTD·Filed 2023·Application pending·0 cites
- 0541US8964342B2Compound semiconductor ESD protection devicesWIN SEMICONDUCTORS CORP·Filed 2012·Granted Feb 24, 2015·0 cites·21 claims
- 0640US10361272B2InGaAlP Schottky field effect transistor with AlGaAs carrier supply layerWIN SEMICONDUCTORS CORP·Filed 2017·Granted Jul 23, 2019·0 cites·23 claims
- 0740US2010171179A1Full periphery multi-gate transistor with ohmic stripWIN SEMICONDUCTORS CORP·Filed 2009·Application pending·0 cites
- 0839US2009278171A1High linearity doped-channel FETWIN SEMICONDUCTORS CORP·Filed 2008·Application pending·0 cites
- 0938US10186620B1InGaAlP schottky field effect transistor with stepped bandgap ohmic contactWIN SEMICONDUCTORS CORP·Filed 2017·Granted Jan 22, 2019·0 cites·8 claims
- 1030US8653562B2Structure of a high electron mobility transistorYUAN CHENG-GUAN·Filed 2011·Granted Feb 18, 2014·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →