Inventor · disambiguated record
Clint Montgomery
Also filed as: MONTGOMERY CLINT · MONTGOMERY CLINT L
8 granted patents·3 pending applications·51 citations·filing 2003–2009
85Inventor score
Files withTEXAS INSTRUMENTS INC11
Top patents by PatentIndex Score
11 records- 0173US7148143B2Semiconductor device having a fully silicided gate electrode and method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2004·Granted Dec 12, 2006·15 cites·18 claims
- 0271US7422968B2Method for manufacturing a semiconductor device having silicided regionsTEXAS INSTRUMENTS INC·Filed 2004·Granted Sep 9, 2008·16 cites·20 claims
- 0368US7863192B2Methods for full gate silicidation of metal gate structuresTEXAS INSTRUMENTS INC·Filed 2007·Granted Jan 4, 2011·4 cites·23 claims
- 0461US7323409B2Method for forming a void free viaTEXAS INSTRUMENTS INC·Filed 2005·Granted Jan 29, 2008·3 cites·6 claims
- 0556US6921721B2Post plasma clean process for a hardmaskTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 26, 2005·7 cites·10 claims
- 0653US8053296B2Capacitor formed on a recrystallized polysilicon layerTEXAS INSTRUMENTS INC·Filed 2009·Granted Nov 8, 2011·0 cites·10 claims
- 0750US7448395B2Process method to facilitate silicidationTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 11, 2008·3 cites·14 claims
- 0846US6977437B2Method for forming a void free viaTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 20, 2005·3 cites·7 claims
- 0946US2007063294A1Semiconductor Device Having a Fully Silicided Gate Electrode and Method of Manufacture ThereforTEXAS INSTRUMENTS INC·Filed 2006·Application pending·0 cites
- 1044US2009096055A1Method to form cmos circuits with sub 50nm sti structures using selective epitaxial silicon post sti etchTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1138US2005110114A1Capacitor formed on a recrystallized polysilicon layer and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →