Inventor · disambiguated record
Cory Bomberger
Also filed as: BOMBERGER CORY · BOMBERGER CORY C
39 granted patents·14 pending applications·42 citations·filing 2017–2025
96Inventor score
Top patents by PatentIndex Score
53 records- 0196US12021149B2Fin smoothing and integrated circuit structures resulting therefromINTEL CORP·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0295US12272727B2Gate-all-around integrated circuit structures having embedded GeSnB source or drain structuresINTEL CORP·Filed 2024·Granted Apr 8, 2025·2 cites·19 claims
- 0394US12027585B2Source or drain structures with low resistivityINTEL CORP·Filed 2023·Granted Jul 2, 2024·2 cites·20 claims
- 0494US11990513B2Gate-all-around integrated circuit structures having embedded GeSnB source or drain structuresINTEL CORP·Filed 2022·Granted May 21, 2024·2 cites·20 claims
- 0593US11222977B2Source/drain diffusion barrier for germanium NMOS transistorsINTEL CORP·Filed 2017·Granted Jan 11, 2022·8 cites·22 claims
- 0692US11522048B2Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubsINTEL CORP·Filed 2019·Granted Dec 6, 2022·6 cites·20 claims
- 0786US12237420B2Fin smoothing and integrated circuit structures resulting therefromINTEL CORP·Filed 2024·Granted Feb 25, 2025·0 cites·20 claims
- 0886US11532706B2Gate-all-around integrated circuit structures having embedded GeSnB source or drain structuresINTEL CORP·Filed 2019·Granted Dec 20, 2022·3 cites·28 claims
- 0985US12027417B2Source or drain structures with high germanium concentration capping layerINTEL CORP·Filed 2020·Granted Jul 2, 2024·2 cites·16 claims
- 1084US11532734B2Gate-all-around integrated circuit structures having germanium nanowire channel structuresINTEL CORP·Filed 2019·Granted Dec 20, 2022·3 cites·26 claims
- 1184US2025142870A1Fin smoothing and integrated circuit structures resulting therefromINTEL CORP·Filed 2024·Application pending·0 cites
- 1283US11682731B2Fin smoothing and integrated circuit structures resulting therefromINTEL CORP·Filed 2019·Granted Jun 20, 2023·2 cites·23 claims
- 1383US2025380478A1Source or drain structures with relatively high germanium contentINTEL CORP·Filed 2025·Application pending·0 cites
- 1482US12388011B2Top gate recessed channel CMOS thin film transistor and methods of fabricationINTEL CORP·Filed 2023·Granted Aug 12, 2025·0 cites·18 claims
- 1582US11328988B2Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabricationINTEL CORP·Filed 2019·Granted May 10, 2022·2 cites·17 claims
- 1681US11735630B2Integrated circuit structures with source or drain dopant diffusion blocking layersINTEL CORP·Filed 2019·Granted Aug 22, 2023·2 cites·20 claims
- 1781US11244943B2Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel materialINTEL CORP·Filed 2019·Granted Feb 8, 2022·2 cites·21 claims
- 1880US2025048698A1Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubsINTEL CORP·Filed 2024·Application pending·0 cites
- 1978US11164785B2Three-dimensional integrated circuits (3DICs) including upper-level transistors with epitaxial source and drain materialINTEL CORP·Filed 2019·Granted Nov 2, 2021·2 cites·15 claims
- 2075US12159901B2Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubsINTEL CORP·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 2174US11929320B2Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabricationINTEL CORP·Filed 2022·Granted Mar 12, 2024·0 cites·19 claims
- 2272US11978784B2Gate-all-around integrated circuit structures having germanium nanowire channel structuresINTEL CORP·Filed 2022·Granted May 7, 2024·0 cites·25 claims
- 2372US11887988B2Thin film transistor structures with regrown source and drainINTEL CORP·Filed 2019·Granted Jan 30, 2024·1 cites·17 claims
- 2471US11699756B2Source/drain diffusion barrier for germanium nMOS transistorsINTEL CORP·Filed 2021·Granted Jul 11, 2023·0 cites·20 claims
- 2571US2023343826A1Integrated circuit structures with source or drain dopant diffusion blocking layersINTEL CORP·Filed 2023·Application pending·0 cites
- 2669US11996404B2Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel materialINTEL CORP·Filed 2021·Granted May 28, 2024·0 cites·18 claims
- 2769US11984449B2Channel structures with sub-fin dopant diffusion blocking layersINTEL CORP·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 2869US11056592B2Silicon substrate modification to enable formation of thin, relaxed, germanium-based layerINTEL CORP·Filed 2017·Granted Jul 6, 2021·1 cites·20 claims
- 2968US11735670B2Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium NMOS transistorsINTEL CORP·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 3057US12426342B2Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stabilityINTEL CORP·Filed 2021·Granted Sep 23, 2025·0 cites·8 claims
- 3156US11621325B2Source or drain structures with low resistivityINTEL CORP·Filed 2019·Granted Apr 4, 2023·0 cites·25 claims
- 3255US11521968B2Channel structures with sub-fin dopant diffusion blocking layersINTEL CORP·Filed 2018·Granted Dec 6, 2022·0 cites·23 claims
- 3354US12484272B2Source or drain structures with relatively high germanium contentINTEL CORP·Filed 2018·Granted Nov 25, 2025·0 cites·17 claims
- 3454US12439640B2Reduced contact resistivity with PMOS germanium and silicon doped with boron gate all around transistorsINTEL CORP·Filed 2021·Granted Oct 7, 2025·0 cites·12 claims
- 3554US11189730B2Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistorsINTEL CORP·Filed 2017·Granted Nov 30, 2021·0 cites·20 claims
- 3650US2023197716A1Transistors with epitaxial source/drain liner for improved contact resistanceINTEL CORP·Filed 2021·Application pending·0 cites
- 3750US2023207317A1Strain compensation via ion implantation in relaxed buffer layer to prevent wafer bowINTEL CORP·Filed 2021·Application pending·0 cites
- 3849US11450739B2Germanium-rich nanowire transistor with relaxed buffer layerINTEL CORP·Filed 2018·Granted Sep 20, 2022·0 cites·20 claims
- 3949US2023163212A1Gate-all-around transistor device with compressively strained channel layersINTEL CORP·Filed 2021·Application pending·0 cites
- 4048US2023317789A1Source or drain structures with selective silicide contacts thereonINTEL CORP·Filed 2022·Application pending·0 cites
- 4148US2023207655A1Formation of metal contacts to silicon germanium layers with etch resistive cap layersINTEL CORP·Filed 2021·Application pending·0 cites
- 4247US11482457B2Substrate defect blocking layers for strained channel semiconductor devicesINTEL CORP·Filed 2017·Granted Oct 25, 2022·0 cites·21 claims
- 4347US2023207560A1Transistors with doped intrinsic germanium caps on source drain regions for improved contact resistanceINTEL CORP·Filed 2021·Application pending·0 cites
- 4446US11430787B2Forming crystalline source/drain contacts on semiconductor devicesINTEL CORP·Filed 2017·Granted Aug 30, 2022·0 cites·20 claims
- 4546US11101356B2Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistorsINTEL CORP·Filed 2017·Granted Aug 24, 2021·0 cites·20 claims
- 4646US2023101725A1Silicon rich capping layer pre-amorphized with germanium and boron implants for thermal stability and low pmos contact resistivityINTEL CORP·Filed 2021·Application pending·0 cites
- 4744US11575005B2Asymmetrical semiconductor nanowire field-effect transistorINTEL CORP·Filed 2018·Granted Feb 7, 2023·0 cites·17 claims
- 4844US11374100B2Source or drain structures with contact etch stop layerINTEL CORP·Filed 2018·Granted Jun 28, 2022·0 cites·17 claims
- 4944US2023207651A1Gate-all-around integrated circuit structures having source or drain structures with substrate connection portionsHASAN MOHAMMAD·Filed 2021·Application pending·0 cites
- 5044US2021408283A1Gate-all-around integrated circuit structures having strained source or drain structures on insulatorINTEL CORP·Filed 2020·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →