Inventor · disambiguated record
Constantin Csato
Also filed as: CSATO CONSTANTIN
11 granted patents·8 pending applications·3 citations·filing 2017–2024
82Inventor score
Files withMI2 FACTORY GMBH19
Top patents by PatentIndex Score
19 records- 0183US2025014854A1Energy filter element for ion implantation systems for the use in the production of wafersMI2 FACTORY GMBH·Filed 2024·Application pending·0 cites
- 0281US12080510B2Energy filter element for ion implantation systems for the use in the production of wafersMI2 FACTORY GMBH·Filed 2023·Granted Sep 3, 2024·0 cites·8 claims
- 0380US11183358B2Energy filter element for ion implantation systems for the use in the production of wafersMI2 FACTORY GMBH·Filed 2020·Granted Nov 23, 2021·1 cites·15 claims
- 0476US11929229B2Semiconductor waferMI2 FACTORY GMBH·Filed 2023·Granted Mar 12, 2024·0 cites·13 claims
- 0572US11837430B2Energy filter element for ion implantation systems for the use in the production of wafersMI2 FACTORY GMBH·Filed 2021·Granted Dec 5, 2023·0 cites·1 claims
- 0671US11056309B2Method and device for implanting ions in wafersMI2 FACTORY GMBH·Filed 2017·Granted Jul 6, 2021·1 cites·9 claims
- 0769US11705300B2Method and device for implanting ions in wafersMI2 FACTORY GMBH·Filed 2021·Granted Jul 18, 2023·0 cites·3 claims
- 0865US10847338B2Energy filter element for ion implantation systems for the use in the production of wafersMI2 FACTORY GMBH·Filed 2017·Granted Nov 24, 2020·1 cites·16 claims
- 0964US12494337B2Ion implantation device comprising energy filter and additional heating elementMI2 FACTORY GMBH·Filed 2021·Granted Dec 9, 2025·0 cites·13 claims
- 1048US2024303390A1A computer-implemented method for the simulation of an energy-filtered ion implantation (efii) using an ion tunnelMI2 FACTORY GMBH·Filed 2022·Application pending·0 cites
- 1148US2024321627A1Method for producing an electronic semiconductor componentMI2 FACTORY GMBH·Filed 2022·Application pending·0 cites
- 1248US2024232470A9A Method for the Simulation of an Energy-Filtered Ion Implantation (EFII)MI2 FACTORY GMBH·Filed 2022·Application pending·0 cites
- 1347US2024047168A1Energy Filter Assembly for Ion Implantation System with at least one coupling elementMI2 FACTORY GMBH·Filed 2021·Application pending·0 cites
- 1447US2024038491A1Ion implantation device with an energy filter and a support element for overlapping at least part of the energy filterMI2 FACTORY GMBH·Filed 2021·Application pending·0 cites
- 1546US12266499B2Energy filter for use in the implantation of ions into a substrateMI2 FACTORY GMBH·Filed 2020·Granted Apr 1, 2025·0 cites·17 claims
- 1646US2024055251A1Method for producing a pretreated composite substrate, and pretreated composite substrateMI2 FACTORY GMBH·Filed 2021·Application pending·0 cites
- 1746US2024055472A1Electronic semiconductor component, and method for manufacturing a pretreated composite substrate for an electronic semiconductor componentMI2 FACTORY GMBH·Filed 2021·Application pending·0 cites
- 1845US12368047B2Method for producing semiconductor components, and semiconductor componentMI2 FACTORY GMBH·Filed 2020·Granted Jul 22, 2025·0 cites·21 claims
- 1945US12125670B2Device and method for implanting particles into a substrateMI2 FACTORY GMBH·Filed 2020·Granted Oct 22, 2024·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →