Inventor · disambiguated record
Cory E. Weber
Also filed as: WEBER CORY · WEBER CORY E
51 granted patents·22 pending applications·294 citations·filing 1999–2025
98Inventor score
Top patents by PatentIndex Score
73 records- 0196US10304946B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2015·Granted May 28, 2019·11 cites·21 claims
- 0295US12243875B2Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2024·Granted Mar 4, 2025·2 cites·20 claims
- 0395US7226843B2Indium-boron dual halo MOSFETINTEL CORP·Filed 2002·Granted Jun 5, 2007·136 cites·16 claims
- 0490US11923370B2Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2020·Granted Mar 5, 2024·2 cites·20 claims
- 0590US7566605B2Epitaxial silicon germanium for reduced contact resistance in field-effect transistorsINTEL CORP·Filed 2006·Granted Jul 28, 2009·18 cites·8 claims
- 0689US10411090B2Hybrid trigate and nanowire CMOS device architectureINTEL CORP·Filed 2015·Granted Sep 10, 2019·6 cites·13 claims
- 0788US9583487B2Semiconductor device having metallic source and drain regionsGILES MARTIN D·Filed 2011·Granted Feb 28, 2017·10 cites·23 claims
- 0886US12288813B2Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 0986US8193049B2Methods of channel stress engineering and structures formed therebyGOLONZKA OLEG·Filed 2008·Granted Jun 5, 2012·14 cites·13 claims
- 1084US11342432B2Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2020·Granted May 24, 2022·1 cites·20 claims
- 1184US7851291B2Epitaxial silicon germanium for reduced contact resistance in field-effect transistorsINTEL CORP·Filed 2009·Granted Dec 14, 2010·10 cites·5 claims
- 1283US10483385B2Nanowire structures having wrap-around contactsCEA STEPHEN M·Filed 2011·Granted Nov 19, 2019·4 cites·24 claims
- 1382US2025227959A1Gate-all-around integrated circuit structures having insulator fin on insulator substrateINTEL CORP·Filed 2025·Application pending·0 cites
- 1479US11862702B2Gate-all-around integrated circuit structures having insulator FIN on insulator substrateINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1579US6800887B1Nitrogen controlled growth of dislocation loop in stress enhanced transistorINTEL CORP·Filed 2003·Granted Oct 5, 2004·17 cites·5 claims
- 1678US12310044B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2022·Granted May 20, 2025·0 cites·19 claims
- 1778US10600810B2Backside fin recess control with multi-hsi optionINTEL CORP·Filed 2015·Granted Mar 24, 2020·2 cites·7 claims
- 1875US10840366B2Nanowire structures having wrap-around contactsINTEL CORP·Filed 2019·Granted Nov 17, 2020·1 cites·20 claims
- 1974US8779477B2Enhanced dislocation stress transistorWEBER CORY·Filed 2008·Granted Jul 15, 2014·4 cites·10 claims
- 2074US2025185363A1Forksheet transistors with dielectric or conductive spineINTEL CORP·Filed 2025·Application pending·0 cites
- 2173US12471362B2Integrated circuit structures having ultra-high conductivity global routingINTEL CORP·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 2273US11335789B2Channel structures for thin-film transistorsINTEL CORP·Filed 2018·Granted May 17, 2022·1 cites·25 claims
- 2373US7226824B2Nitrogen controlled growth of dislocation loop in stress enhanced transistorINTEL CORP·Filed 2004·Granted Jun 5, 2007·11 cites·11 claims
- 2473US2024355682A1Extension of nanocomb transistor arrangements to implement gate all aroundINTEL CORP·Filed 2024·Application pending·0 cites
- 2572US11990476B2Semiconductor nanowire device having (111)-plane channel sidewallsINTEL CORP·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2672US11522072B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2020·Granted Dec 6, 2022·0 cites·23 claims
- 2770US11881517B2Channel structures for thin-film transistorsINTEL CORP·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 2869US6410359B2Reduced leakage trench isolationINTEL CORP·Filed 2001·Granted Jun 25, 2002·12 cites·6 claims
- 2967US11757026B2Nanowire structures having wrap-around contactsGOOGLE LLC·Filed 2020·Granted Sep 12, 2023·0 cites·20 claims
- 3065US10910405B2Backside fin recess control with multi-HSI optionINTEL CORP·Filed 2020·Granted Feb 2, 2021·0 cites·20 claims
- 3165US7187057B2Nitrogen controlled growth of dislocation loop in stress enhanced transistorINTEL CORP·Filed 2004·Granted Mar 6, 2007·7 cites·12 claims
- 3264US10847635B2Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devicesINTEL CORP·Filed 2019·Granted Nov 24, 2020·0 cites·12 claims
- 3363US12068206B2Extension of nanocomb transistor arrangements to implement gate all aroundINTEL CORP·Filed 2020·Granted Aug 20, 2024·0 cites·20 claims
- 3463US6838329B2High concentration indium fluorine retrograde wellsINTEL CORP·Filed 2003·Granted Jan 4, 2005·7 cites·18 claims
- 3561US7129533B2High concentration indium fluorine retrograde wellsINTEL CORP·Filed 2003·Granted Oct 31, 2006·6 cites·14 claims
- 3660US10084087B2Enhanced dislocation stress transistorINTEL CORP·Filed 2017·Granted Sep 25, 2018·0 cites·20 claims
- 3760US9231076B2Enhanced dislocation stress transistorINTEL CORP·Filed 2014·Granted Jan 5, 2016·0 cites·12 claims
- 3859US12501661B2Integrated circuit structures having differentiated channel sizingINTEL CORP·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 3959US2025301708A1Forksheet transistors with self-aligned dielectric spineINTEL CORP·Filed 2024·Application pending·0 cites
- 4058US11264453B2Methods of doping fin structures of non-planar transistor devicesINTEL CORP·Filed 2019·Granted Mar 1, 2022·0 cites·19 claims
- 4158US9076814B2Enhanced dislocation stress transistorINTEL CORP·Filed 2014·Granted Jul 7, 2015·0 cites·16 claims
- 4257US9660078B2Enhanced dislocation stress transistorINTEL CORP·Filed 2015·Granted May 23, 2017·0 cites·13 claims
- 4356US12507449B2Gate-all-around integrated circuit structures having necked featureINTEL CORP·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4455US11398478B2Semiconductor nanowire device having (111)-plane channel sidewallsINTEL CORP·Filed 2018·Granted Jul 26, 2022·0 cites·12 claims
- 4555US2025221020A1Double-sided device contacts and through vias for performance and layout benefitsINTEL CORP·Filed 2023·Application pending·0 cites
- 4654US12199098B2Fin doping and integrated circuit structures resulting therefromINTEL CORP·Filed 2021·Granted Jan 14, 2025·0 cites·22 claims
- 4753US2024006412A1Integrated circuit structures having recessed channel transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 4853US2024006317A1Integrated circuit structures having vertical keeper or power gate for backside power deliveryINTEL CORP·Filed 2022·Application pending·0 cites
- 4953US2023422485A1Integrated circuit structures having memory with backside dram and power deliveryINTEL CORP·Filed 2022·Application pending·0 cites
- 5051US10847653B2Semiconductor device having metallic source and drain regionsINTEL CORP·Filed 2017·Granted Nov 24, 2020·0 cites·9 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →