Inventor · disambiguated record
Craig T. Salling
Also filed as: SALLING CRAIG T · SALLING CRAIG THOMAS
34 granted patents·3 pending applications·483 citations·filing 2000–2006
98Inventor score
Top patents by PatentIndex Score
37 records- 0195US6646906B2Methods of reading ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 11, 2003·79 cites·22 claims
- 0294US6587365B1Array architecture for depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Jul 1, 2003·63 cites·10 claims
- 0391US6858902B1Efficient ESD protection with application for low capacitance I/O padsTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 22, 2005·58 cites·19 claims
- 0488US6515889B1Junction-isolated depletion mode ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 4, 2003·25 cites·11 claims
- 0583US6876022B2Junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 5, 2005·16 cites·17 claims
- 0683US6563175B2NMOS ESD protection device with thin silicide and methods for making sameTEXAS INSTRUMENTS INC·Filed 2001·Granted May 13, 2003·30 cites·15 claims
- 0776US6875650B2Eliminating substrate noise by an electrically isolated high-voltage I/O transistorTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 5, 2005·19 cites·25 claims
- 0876US6665206B2Array architecture for depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 16, 2003·13 cites·18 claims
- 0975US6366489B1Bi-state ferroelectric memory devices, uses and operationMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 2, 2002·17 cites·32 claims
- 1074US7187530B2Electrostatic discharge protection circuitT RAM SEMICONDUCTOR INC·Filed 2003·Granted Mar 6, 2007·27 cites·25 claims
- 1173US6882560B2Reading ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2003·Granted Apr 19, 2005·11 cites·17 claims
- 1272US6900969B2ESD protection with uniform substrate biasTEXAS INSTRUMENTS INC·Filed 2002·Granted May 31, 2005·17 cites·14 claims
- 1371US6574131B1Depletion mode ferroelectric memory device and method of writing to and reading from the sameMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 3, 2003·16 cites·37 claims
- 1470US6791862B2Junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 14, 2004·7 cites·15 claims
- 1567US6888738B2Methods of writing junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted May 3, 2005·6 cites·6 claims
- 1667US6724050B2ESD improvement by a vertical bipolar transistor with low breakdown voltage and high betaTEXAS INSTRUMENTS INC·Filed 2002·Granted Apr 20, 2004·13 cites·7 claims
- 1765US6903960B2Junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 7, 2005·5 cites·19 claims
- 1865US6835623B2NMOS ESD protection device with thin silicide and methods for making sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 28, 2004·10 cites·9 claims
- 1964US6764909B2Structure and method of MOS transistor having increased substrate resistanceTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 20, 2004·9 cites·20 claims
- 2062US7236387B2Writing to ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 26, 2007·1 cites·10 claims
- 2162US6888185B2Junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted May 3, 2005·4 cites·19 claims
- 2261US7002198B2Junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 21, 2006·4 cites·21 claims
- 2361US6888747B2Methods of reading junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted May 3, 2005·4 cites·19 claims
- 2459US7256460B2Body-biased pMOS protection against electrostatic dischargeTEXAS INSTRUMENTS INC·Filed 2004·Granted Aug 14, 2007·8 cites·2 claims
- 2554US7253464B2Junction-isolated depletion mode ferroelectric memory devices and systemsMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 7, 2007·0 cites·21 claims
- 2653US6982449B2Junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 3, 2006·2 cites·30 claims
- 2753US6944043B2Junction-isolated depletion mode ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 13, 2005·2 cites·5 claims
- 2853US6767810B2Method to increase substrate potential in MOS transistors used in ESD protection circuitsTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 27, 2004·5 cites·10 claims
- 2951US7199413B2Junction-isolated depletion mode ferroelectric memory devices and systemsMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 3, 2007·0 cites·21 claims
- 3049US7123503B2Writing to ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 17, 2006·0 cites·15 claims
- 3149US6937501B2Writing to ferroelectric memory devicesMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 30, 2005·2 cites·4 claims
- 3248US6627955B2Structure and method of MOS transistor having increased substrate resistanceTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 30, 2003·2 cites·9 claims
- 3345US6522571B2Methods of forming and reading ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 18, 2003·3 cites·30 claims
- 3445US6449187B1Method and apparatus for programming flash memory deviceTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 10, 2002·5 cites·21 claims
- 3539US2003134479A1Eliminating substrate noise by an electrically isolated high-voltage I/O transistorFiled 2002·Application pending·0 cites
- 3637US2003071310A1Method to increase substrate potential in MOS transistors used in ESD protection circuitsFiled 2001·Application pending·0 cites
- 3735US2004212936A1Diode-string substrate-pumped electrostatic discharge protectionFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →