Inventor · disambiguated record
Cyrille Le Royer
Also filed as: LE ROYER CYRILLE
23 granted patents·3 pending applications·40 citations·filing 2006–2023
92Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE20COMMISSARIAT Á L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES2ST MICROELECTRONICS SA2ST MICROELECTRONICS CROLLES 21WAN JING1
Top patents by PatentIndex Score
26 records- 0188US9117805B2Air-spacer MOS transistorST MICROELECTRONICS SA·Filed 2014·Granted Aug 25, 2015·11 cites·15 claims
- 0284US9502558B2Local strain generation in an SOI substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Nov 22, 2016·4 cites·9 claims
- 0373US7759175B2Fabrication method of a mixed substrate and use of the substrate for producing circuitsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jul 20, 2010·4 cites·12 claims
- 0472US9099555B2Tunnel field effect transistorCOMMISSARIAT Á L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES·Filed 2013·Granted Aug 4, 2015·4 cites·10 claims
- 0571US11217446B2Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jan 4, 2022·1 cites·16 claims
- 0671US11121043B2Fabrication of transistors having stressed channelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Sep 14, 2021·1 cites·21 claims
- 0770US9252269B2Tunnel effect transistorCommissariat à l'énergie atomique et aux énergies alternatives·Filed 2014·Granted Feb 2, 2016·3 cites·10 claims
- 0868US7732282B2Transistor of the I-MOS type comprising two independent gates and method of using such a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 8, 2010·4 cites·7 claims
- 0965US9276102B2Tunnel transistor with high current by bipolar amplificationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Mar 1, 2016·2 cites·18 claims
- 1064US9911820B2Method for fabrication of a field-effect with reduced stray capacitanceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 6, 2018·1 cites·14 claims
- 1164US8581310B2Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionizationWAN JING·Filed 2012·Granted Nov 12, 2013·3 cites·7 claims
- 1263US8634229B2Dynamic memory cell provided with a field-effect transistor having zero swingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jan 21, 2014·2 cites·9 claims
- 1359US12408405B2Device comprising spacers including a localised airgap and associated manufacturing methodsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Sep 2, 2025·0 cites·14 claims
- 1457US12389644B2Method for manufacturing a transistor with a gate-all-around structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Aug 12, 2025·0 cites·15 claims
- 1556US11941485B2Method of making a quantum deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Mar 26, 2024·0 cites·15 claims
- 1654US12477958B2Method for making an electronic device with superconductor qubit(s) including at least one JoFETCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Granted Nov 18, 2025·0 cites·14 claims
- 1754US2023210021A1Method of making superconducting interconnectionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1849US12477785B2Quantum device and method for producing the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Nov 18, 2025·0 cites·19 claims
- 1948US11387147B2Method for producing a component by filling a cavity within an electrical isolation area with carbon-based materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jul 12, 2022·0 cites·6 claims
- 2047US11515148B2Method for producing at least one device in compressive strained semiconductorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 29, 2022·0 cites·10 claims
- 2146US11854805B2Method for producing SiGe-based zones at different concentrations of GeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Dec 26, 2023·0 cites·13 claims
- 2246US11362181B2Method for manufacturing an electronic component having multiple quantum dotsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jun 14, 2022·0 cites·16 claims
- 2346US11081399B2Method of producing microelectronic componentsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Aug 3, 2021·0 cites·18 claims
- 2445US2022310394A1Method for producing a microelectronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 2543US8822332B2Method for forming gate, source, and drain contacts on a MOS transistorST MICROELECTRONICS SA·Filed 2013·Granted Sep 2, 2014·0 cites·12 claims
- 2641US2015091089A1Air-spacer mos transistorST MICROELECTRONICS CROLLES 2·Filed 2014·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Cyrille Le Royer files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →