Inventor · disambiguated record
Cyril Pernot
Also filed as: PERNOT CYRIL
25 granted patents·21 pending applications·76 citations·filing 2009–2024
93Inventor score
Top patents by PatentIndex Score
46 records- 0197US9502606B2Nitride semiconductor ultraviolet light-emitting elementSOKO KAGAKU CO LTD·Filed 2016·Granted Nov 22, 2016·19 cites·5 claims
- 0292US11227974B2Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2018·Granted Jan 18, 2022·4 cites·5 claims
- 0392US9356192B2Nitride semiconductor ultraviolet light-emitting elementPERNOT CYRIL·Filed 2011·Granted May 31, 2016·23 cites·10 claims
- 0491US11404603B2Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·5 claims
- 0591US11322654B2Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2020·Granted May 3, 2022·2 cites·7 claims
- 0687US11444222B2Nitride semiconductor light-emitting element and production method for nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2018·Granted Sep 13, 2022·4 cites·5 claims
- 0786US10944026B2Semiconductor light emitting device and method of manufacturing semiconductor light emitting deviceNIKKISO CO LTD·Filed 2019·Granted Mar 9, 2021·4 cites·6 claims
- 0883US11476391B2Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2020·Granted Oct 18, 2022·1 cites·11 claims
- 0983US11355670B2Deep ultraviolet light emitting deviceNIKKISO CO LTD·Filed 2018·Granted Jun 7, 2022·2 cites·5 claims
- 1083US9112115B2Nitride semiconductor ultraviolet light-emitting elementINAZU TETSUHIKO·Filed 2011·Granted Aug 18, 2015·5 cites·17 claims
- 1181US8822976B2Nitride semiconductor ultraviolet light-emitting elementINAZU TETSUHIKO·Filed 2011·Granted Sep 2, 2014·4 cites·13 claims
- 1278US11616167B2Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2018·Granted Mar 28, 2023·1 cites·7 claims
- 1377US2023420600A1Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2023·Application pending·0 cites
- 1472US9412586B2Method for producing a template for epitaxial growth having a sapphire (0001) substrate, an initial-stage A1N layer and laterally overgrown A1XGAYN (0001) layerAMANO HIROSHI·Filed 2009·Granted Aug 9, 2016·3 cites·8 claims
- 1570US11799051B2Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·7 claims
- 1668US10297715B2Nitride semiconductor ultraviolet light-emitting elementSOKO KAGAKU CO LTD·Filed 2015·Granted May 21, 2019·2 cites·9 claims
- 1766US12507507B2Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·5 claims
- 1865US12009457B2Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·10 claims
- 1962US2025194299A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2024·Application pending·0 cites
- 2062US2023378393A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2023·Application pending·0 cites
- 2162US2025221098A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2024·Application pending·0 cites
- 2261US11563139B2Method of manufacturing deep ultraviolet light emitting deviceNIKKISO CO LTD·Filed 2020·Granted Jan 24, 2023·0 cites·4 claims
- 2361US2025040304A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2024·Application pending·0 cites
- 2460US12349513B2Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2021·Granted Jul 1, 2025·0 cites·8 claims
- 2560US12057525B2Nitride semiconductor light-emitting element and method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·8 claims
- 2660US2024322076A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2024·Application pending·0 cites
- 2760US2024378504A1Method and device for predicting light output of nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2024·Application pending·0 cites
- 2860US2024378341A1Method and device for predicting lifetime of nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2024·Application pending·0 cites
- 2959US12389716B2Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·6 claims
- 3059US2023105525A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2022·Application pending·0 cites
- 3159US2023105852A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2022·Application pending·0 cites
- 3259US2024213402A1Method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2023·Application pending·0 cites
- 3358US12446357B2Method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·12 claims
- 3454US2019074403A1Deep ultraviolet light emitting device and method of manufacturing deep ultraviolet light emitting deviceNIKKISO CO LTD·Filed 2018·Application pending·0 cites
- 3553US11302845B2Semiconductor light-emitting elementNIKKISO CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·6 claims
- 3653US2022384681A1Nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2022·Application pending·0 cites
- 3749US2019026679A1Method for periodical collection of information in a network of computer stations by a computer server of said networkATOS SE·Filed 2017·Application pending·0 cites
- 3848US9556535B2Template for epitaxial growth, method for producing the same, and nitride semiconductor deviceSOKO KAGAKU CO LTD·Filed 2014·Granted Jan 31, 2017·0 cites·12 claims
- 3948US2023246120A1Susceptor and method for manufacturing nitride semiconductor light-emitting elementNIKKISO CO LTD·Filed 2023·Application pending·0 cites
- 4048US2016319459A1METHOD FOR PRODUCING A TEMPLATE FOR EPITAXIAL GROWTH HAVING A SAPPHIRE (0001) SUBSTRATE, AN INITIAL-STAGE AlN LAYER AND LATERALLY OVERGROWN AlxGayN (0001) LAYERSOKO KAGAKU CO LTD·Filed 2016·Application pending·0 cites
- 4147US10396244B2Nitride semiconductor light emitting elementSOKO KAGAKU CO LTD·Filed 2014·Granted Aug 27, 2019·0 cites·10 claims
- 4247US2021336087A1Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting elementNIKKISO CO LTD·Filed 2021·Application pending·0 cites
- 4346US2021193872A1Semiconductor light-emitting elementNIKKISO CO LTD·Filed 2020·Application pending·0 cites
- 4445US2021296527A1Nitride semiconductor light-emitting element and method for manufacturing sameNIKKISO CO LTD·Filed 2019·Application pending·0 cites
- 4542US2021066546A1Nitride semiconductor element and nitride semiconductor element production methodNIKKISO CO LTD·Filed 2018·Application pending·0 cites
- 4642US2019081215A1Deep ultraviolet light emitting deviceNIKKISO CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →