Inventor · disambiguated record
Daniel Bensahel
Also filed as: BENSAHEL DANIEL · BENSAHEL DANIEL-CAMILLE
36 granted patents·717 citations·filing 1979–2014
97Inventor score
Files withFRANCE TELECOM8ST MICROELECTRONICS SA8SOITEC SILICON ON INSULATOR5COMMISSARIAT ENERGIE ATOMIQUE3ST MICROELECTRONICS CROLLES 23
Top patents by PatentIndex Score
36 records- 0195US7534701B2Process for transferring a layer of strained semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2008·Granted May 19, 2009·24 cites·19 claims
- 0295US6537370B1Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtainedFRANCE TELECOM·Filed 1999·Granted Mar 25, 2003·158 cites·38 claims
- 0393US6953736B2Process for transferring a layer of strained semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2003·Granted Oct 11, 2005·55 cites·26 claims
- 0493US6117750AProcess for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectivelyFRANCE TELECOM·Filed 1998·Granted Sep 12, 2000·123 cites·18 claims
- 0589US6429098B1Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtainedFRANCE TELECOM·Filed 2000·Granted Aug 6, 2002·42 cites·37 claims
- 0684US6399502B1Process for fabricating a planar heterostructureFRANCE TELECOM·Filed 2000·Granted Jun 4, 2002·31 cites·8 claims
- 0780US6596555B2Forming of quantum dotsST MICROELECTRONICS SA·Filed 2001·Granted Jul 22, 2003·27 cites·18 claims
- 0879US6989570B2Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuitST MICROELECTRONICS SA·Filed 2003·Granted Jan 24, 2006·24 cites·17 claims
- 0978US5876796AProcess for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this processFRANCE TELECOM·Filed 1996·Granted Mar 2, 1999·44 cites·21 claims
- 1075US7338883B2Process for transferring a layer of strained semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2005·Granted Mar 4, 2008·4 cites·19 claims
- 1171US6255149B1Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gateFRANCE TELECOM·Filed 1999·Granted Jul 3, 2001·30 cites·20 claims
- 1270US7879679B2Electronic component manufacturing methodST MICROELECTRONICS CROLLES 2·Filed 2008·Granted Feb 1, 2011·5 cites·8 claims
- 1365US6690027B1Method for making a device comprising layers of planes of quantum dotsFRANCE TELECOM·Filed 2000·Granted Feb 10, 2004·10 cites·18 claims
- 1464US4725561AProcess for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallizationHAOND MICHEL·Filed 1985·Granted Feb 16, 1988·32 cites·17 claims
- 1563US8575011B2Method of fabricating a device with a concentration gradient and the corresponding deviceBENSAHEL DANIEL-CAMILLE·Filed 2008·Granted Nov 5, 2013·2 cites·14 claims
- 1661US5252181AMethod for cleaning the surface of a substrate with plasmaAUTONOME DE DROIT PUBLIC FRANC·Filed 1991·Granted Oct 12, 1993·36 cites·7 claims
- 1761US4263056AMethod for the manufacture of light emitting and/or photodetective diodesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1979·Granted Apr 21, 1981·13 cites·11 claims
- 1860US6372581B1Process for nitriding the gate oxide layer of a semiconductor device and device obtainedFRANCE TELECOM·Filed 1999·Granted Apr 16, 2002·19 cites·9 claims
- 1957US9525067B2Method for forming integrated circuits on a strained semiconductor substrateST MICROELECTRONICS CROLLES 2 SAS·Filed 2014·Granted Dec 20, 2016·0 cites·12 claims
- 2057US7129563B2Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity materialST MICROELECTRONICS SA·Filed 2004·Granted Oct 31, 2006·8 cites·7 claims
- 2157US7033438B2Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrateST MICROELECTRONICS SA·Filed 2003·Granted Apr 25, 2006·5 cites·16 claims
- 2256US8895420B2Method of fabricating a device with a concentration gradient and the corresponding deviceST MICROELECTRONICS CROLLES 2·Filed 2013·Granted Nov 25, 2014·0 cites·19 claims
- 2356US8154091B2Integrated electronic circuit including a thin film portion based on hafnium oxideDUBOURDIEU CATHERINE·Filed 2008·Granted Apr 10, 2012·2 cites·28 claims
- 2455US9356094B2Method for making a semi-conducting substrate located on an insulation layerST MICROELECTRONICS CROLLES 2·Filed 2013·Granted May 31, 2016·0 cites·24 claims
- 2555US7803694B2Process for transferring a layer of strained semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2008·Granted Sep 28, 2010·0 cites·11 claims
- 2654US8536027B2Method for making a semi-conducting substrate located on an insulation layerHALIMAOUI AOMAR·Filed 2008·Granted Sep 17, 2013·0 cites·14 claims
- 2752US8049224B2Process for transferring a layer of strained semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2010·Granted Nov 1, 2011·0 cites·18 claims
- 2852US4229237AMethod of fabrication of semiconductor components having optoelectronic conversion propertiesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1979·Granted Oct 21, 1980·11 cites·14 claims
- 2949US6969661B2Method for forming a localized region of a material difficult to etchST MICROELECTRONICS SA·Filed 2003·Granted Nov 29, 2005·2 cites·9 claims
- 3047US7279404B2Process for fabricating strained layers of silicon or of a silicon/germanium alloyST MICROELECTRONICS SA·Filed 2004·Granted Oct 9, 2007·1 cites·8 claims
- 3145US8906776B2Method for forming integrated circuits on a strained semiconductor substrateBENSAHEL DANIEL·Filed 2011·Granted Dec 9, 2014·0 cites·28 claims
- 3242US7884352B2Single-crystal semiconductor layer with heteroatomic macronetworkST MICROELECTRONICS SA·Filed 2004·Granted Feb 8, 2011·0 cites·16 claims
- 3342US4678538AProcess for the production of an insulating support on an oriented monocrystalline silicon film with localized defectsFRANCE ETAT·Filed 1986·Granted Jul 7, 1987·6 cites·12 claims
- 3441US8263965B2Single-crystal semiconductor layer with heteroatomic macro-networkCAMPIDELLI YVES·Filed 2011·Granted Sep 11, 2012·0 cites·5 claims
- 3538US7381267B2Heteroatomic single-crystal layersST MICROELECTRONICS SA·Filed 2004·Granted Jun 3, 2008·0 cites·7 claims
- 3633US6551698B1Method for treating a silicon substrate, by nitriding, to form a thin insulating layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Apr 22, 2003·3 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →