Inventor · disambiguated record
David F. Bliss
Also filed as: BLISS DAVID · BLISS DAVID F
16 granted patents·446 citations·filing 1991–2012
95Inventor score
Top patents by PatentIndex Score
16 records- 0194US6406540B1Process and apparatus for the growth of nitride materialsUS AIR FORCE·Filed 1999·Granted Jun 18, 2002·141 cites·19 claims
- 0291US6849121B1Growth of uniform crystalsUS AIR FORCE·Filed 2002·Granted Feb 1, 2005·45 cites·10 claims
- 0386US6676752B1Forming metal nitridesUS AIR FORCE·Filed 2002·Granted Jan 13, 2004·25 cites·18 claims
- 0485US6969426B1Forming improved metal nitridesBLISS DAVID F·Filed 2002·Granted Nov 29, 2005·27 cites·15 claims
- 0583US8154792B1Multi-layer gallium arsenide-based fresnel phase-shift device for infrared wavelength conversionWEYBURNE DAVID·Filed 2009·Granted Apr 10, 2012·9 cites·3 claims
- 0681US6143070ASilicon-germanium bulk alloy growth by liquid encapsulated zone meltingUS AIR FORCE·Filed 1998·Granted Nov 7, 2000·44 cites·5 claims
- 0778US8619356B1Multi-layer gallium arsenide-based fresnel phase-shift device for infrared wavelength conversionWEYBURNE DAVID·Filed 2012·Granted Dec 31, 2013·3 cites·2 claims
- 0878US7276121B1Forming improved metal nitridesUS AIR FORCE·Filed 2004·Granted Oct 2, 2007·12 cites·5 claims
- 0978US6113985AProcess for the manufacture of group III nitride targets for use in sputtering and similar equipmentUS AIR FORCE·Filed 1999·Granted Sep 5, 2000·47 cites·10 claims
- 1076US5543630AHigh Tc superconducting devices on bi-crystal substratesUS ARMY·Filed 1995·Granted Aug 6, 1996·32 cites·4 claims
- 1166US8236102B1Hydrothermal methods of fabricating trivalent-metal-ion-doped sapphire crystalsWANG BUGUO·Filed 2009·Granted Aug 7, 2012·2 cites·19 claims
- 1265US5493985AProcess and apparatus for controlled synthesis and in-situ single crystal growth of phosphorus compounds and the crystals therefromUS ARMY·Filed 1993·Granted Feb 27, 1996·18 cites·12 claims
- 1356US6019841AMethod and apparatus for synthesis and growth of semiconductor crystalsG T EQUUIPMENT TECHNOLOGIES IN·Filed 1998·Granted Feb 1, 2000·20 cites·20 claims
- 1456US5431125ATwin-free crystal growth of III-V semiconductor materialUS ARMY·Filed 1991·Granted Jul 11, 1995·14 cites·14 claims
- 1546US7524375B1Growth of uniform crystalsUS AIR FORCE·Filed 2004·Granted Apr 28, 2009·0 cites·5 claims
- 1642US5544615ASynthesis and growth processes for zinc germanium diphosphide single crystalsUS ARMY·Filed 1994·Granted Aug 13, 1996·7 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →