Inventor · disambiguated record
Dae-Seok Byeon
Also filed as: BYEON DAE-SEOK
130 granted patents·7 pending applications·1,295 citations·filing 2001–2022
99Inventor score
Top patents by PatentIndex Score
137 records- 0199US9514827B1Memory device, memory system and method of operating memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 6, 2016·56 cites·20 claims
- 0299US9472282B2Resistive memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 18, 2016·69 cites·20 claims
- 0397US6717857B2Non-volatile semiconductor memory device with cache function and program, read, and page copy-back operations thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·159 cites·36 claims
- 0496US11195587B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 7, 2021·5 cites·20 claims
- 0596US10559362B2Non-volatile memory device and a read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·22 cites·29 claims
- 0696US9171617B1Resistive memory device and method programming sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 27, 2015·26 cites·20 claims
- 0796US7269068B2Flash memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 11, 2007·45 cites·9 claims
- 0895US7272049B2Nonvolatile semiconductor memory device having uniform operational characteristics for memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·48 cites·13 claims
- 0994US11201069B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·3 cites·17 claims
- 1094US9508441B1Memory device and memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 29, 2016·17 cites·20 claims
- 1194US9478290B1Memory device and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 25, 2016·17 cites·29 claims
- 1294US9355721B2Resistive memory device and operating methodYOON CHI-WEON·Filed 2015·Granted May 31, 2016·15 cites·20 claims
- 1394US7397706B2Methods of erasing flash memory devices by applying wordline bias voltages having multiple levels and related flash memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·37 cites·33 claims
- 1493US9842659B2Non-volatile memory device for detecting progressive error, memory system, and method of operating the non-volatile memory deviceNAM SANG-WAN·Filed 2015·Granted Dec 12, 2017·16 cites·10 claims
- 1592US10916314B2Non-volatile memory device and a read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 9, 2021·3 cites·18 claims
- 1690US11183251B2Non-volatile memory device and a read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 23, 2021·2 cites·20 claims
- 1790US9183932B1Resistive memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 10, 2015·11 cites·20 claims
- 1890US8432741B2Nonvolatile memory device and nonvolatile memory system employing sameLEE SEUNG-JAE·Filed 2012·Granted Apr 30, 2013·13 cites·19 claims
- 1990US7843758B2Multi-chip package flash memory device and method for reading status data therefromSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·23 cites·10 claims
- 2090US7596022B2Method for programming a multi-level non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 29, 2009·23 cites·28 claims
- 2189US11069415B2Memory device including charge pump circuitSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·3 cites·20 claims
- 2288US7499327B2NAND flash memory device having page buffer adapted to discharge bit line voltage during erase operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 3, 2009·20 cites·18 claims
- 2387US11295818B2Non-volatile memory device, operating method thereof, and storage device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·2 cites·18 claims
- 2487US9449686B2Resistive memory device, resistive memory system and method of operating the resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 20, 2016·8 cites·20 claims
- 2587US9367417B2Nonvolatile memory device including dummy wordline, memory system, and method of operating memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 14, 2016·10 cites·17 claims
- 2687US8154927B2Nonvolatile memory device and nonvolatile memory system employing sameLEE SEUNG-JAE·Filed 2010·Granted Apr 10, 2012·10 cites·20 claims
- 2787US7911850B2Method of programming flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·13 cites·4 claims
- 2887US7508705B2Method for programming a multi-level non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 24, 2009·19 cites·28 claims
- 2986US10026746B2Memory devices using etching stop layersLEE JEONG GIL·Filed 2017·Granted Jul 17, 2018·8 cites·20 claims
- 3086US9997537B2Semiconductor devices including gate insulation layers on channel materials and methods of forming the sameLEE JUNG HWAN·Filed 2016·Granted Jun 12, 2018·4 cites·20 claims
- 3186US9899394B2Vertical memory devices having contact plugs contacting stacked gate electrodesHWANG SUNG MIN·Filed 2016·Granted Feb 20, 2018·5 cites·18 claims
- 3286US9553105B2Semiconductor devices including gate insulation layers on channel materialsLEE JUNG-HWAN·Filed 2016·Granted Jan 24, 2017·4 cites·20 claims
- 3386US9524983B2Vertical memory devicesLEE BYUNG-JIN·Filed 2016·Granted Dec 20, 2016·5 cites·21 claims
- 3486US9406359B2Memory devices, memory systems, and related operating methodsPARK HYUN-KOOK·Filed 2015·Granted Aug 2, 2016·9 cites·17 claims
- 3586US7038949B2Non-volatile memory device capable of changing increment of program voltage according to mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·40 cites·22 claims
- 3685US9646685B2Resistive memory device, resistive memory, and operating method of the resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 9, 2017·7 cites·13 claims
- 3785US9514813B2Resistive memory device, resistive memory system, and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·7 cites·20 claims
- 3885US9269430B1Memory device having cross point array structure, memory system, and method of operating memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Feb 23, 2016·7 cites·20 claims
- 3985US7439797B2Semiconductor device including a high voltage generation circuit and method of generating a high voltageSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 21, 2008·16 cites·14 claims
- 4084US10580486B2Method of reading data about memory device, method of controlling memory controller, and storage device including memory device and memory controllerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 3, 2020·6 cites·20 claims
- 4183US10692543B2Semiconductor packages, storage devices including the same, and method of operating the semiconductor packagesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 23, 2020·4 cites·20 claims
- 4283US9859297B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 2, 2018·4 cites·20 claims
- 4383US8045380B2Flash memory device and program method of flash memory device using different voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·7 cites·19 claims
- 4483US7852682B2Flash memory device and program method of flash memory device using different voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 14, 2010·11 cites·34 claims
- 4583US6882570B2Power detecting circuit and method for stable power-on reading of flash memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·35 cites·40 claims
- 4682US9558822B2Resistive memory device and method of operating the resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·6 cites·20 claims
- 4782US9437290B2Resistive memory device and operationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 6, 2016·6 cites·19 claims
- 4882US7158418B2Non-volatile memory device capable of changing increment of program voltage to mode of operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 2, 2007·25 cites·29 claims
- 4981US7916540B2Non-volatile memory devices and systems including bad blocks address re-mapped and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 29, 2011·12 cites·22 claims
- 5081US7668019B2Non-volatile memory device and erasing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 23, 2010·12 cites·36 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →