Inventor · disambiguated record
Daichi Dojima
Also filed as: DOJIMA DAICHI
10 granted patents·7 pending applications·0 citations·filing 2017–2022
76Inventor score
Files withKWANSEI GAKUIN EDUCATIONAL FOUND17
Top patents by PatentIndex Score
17 records- 0169US12460315B2Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Nov 4, 2025·0 cites·19 claims
- 0267US12398038B2Manufacturing method of modified aluminum nitride raw material, modified aluminum nitride raw material, manufacturing method of aluminum nitride crystals, and downfall defect prevention methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Aug 26, 2025·0 cites·4 claims
- 0355US12509795B2Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Dec 30, 2025·0 cites·18 claims
- 0455US12325936B2Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processingKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Jun 10, 2025·0 cites·3 claims
- 0555US12255073B2Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processingKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Mar 18, 2025·0 cites·8 claims
- 0653US12385158B2Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holesKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Granted Aug 12, 2025·0 cites·9 claims
- 0753US2025188643A1Method for suppressing formation of stacking fault, structure produced by this method, and method for evaluating affected layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 0853US2024068958A1Method and system for evaluating work-affected layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 0952US12237377B2SiC semiconductor substrate, and, production method therefor and production device thereforKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2019·Granted Feb 25, 2025·0 cites·6 claims
- 1052US2024405076A1Method for achieving uniform carrier concentration in epitaxial layer, and structure created by means of said methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 1152US2025051962A1Method for reducing stacking faults in silicon carbide, and structure created by means of said methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2022·Application pending·0 cites
- 1250US12131960B2Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation methodKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2020·Granted Oct 29, 2024·0 cites·23 claims
- 1350US12020928B2SiC semiconductor substrate, method for manufacturing same, and device for manufacturing sameKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2019·Granted Jun 25, 2024·0 cites·30 claims
- 1448US2024020814A1Heat treatment environment evaluation method and silicon carbide substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Application pending·0 cites
- 1548US2023392282A1Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing introduction of dislocation into aluminum nitride growth layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Application pending·0 cites
- 1641US2023197486A1Method for producing aluminum nitride substrate, aluminum nitride substrate, and method for suppressing occurrence of cracks in aluminum nitride layerKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2021·Application pending·0 cites
- 1738US11365491B2Method for producing SiC substrate provided with graphene precursor and method for surface treating SiC substrateKWANSEI GAKUIN EDUCATIONAL FOUND·Filed 2017·Granted Jun 21, 2022·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →