Inventor · disambiguated record
Darwin Gene Enicks
Also filed as: ENICKS DARWIN · ENICKS DARWIN G · ENICKS DARWIN GENE
23 granted patents·13 pending applications·287 citations·filing 2002–2017
95Inventor score
Top patents by PatentIndex Score
36 records- 0198US9561982B2Method of cleaning glass substratesCORNING INC·Filed 2014·Granted Feb 7, 2017·186 cites·20 claims
- 0295US10086584B2Glass articles and methods for controlled bonding of glass sheets with carriersCORNING INC·Filed 2013·Granted Oct 2, 2018·19 cites·24 claims
- 0390US7569913B2Boron etch-stop layer and methods related theretoATMEL CORP·Filed 2006·Granted Aug 4, 2009·15 cites·17 claims
- 0487US7495250B2Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related theretoATMEL CORP·Filed 2006·Granted Feb 24, 2009·12 cites·24 claims
- 0579US9703010B2Articles with anti-reflective high-hardness coatings and related methodsCORNING INC·Filed 2014·Granted Jul 11, 2017·4 cites·16 claims
- 0679US7439558B2Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancementATMEL CORP·Filed 2005·Granted Oct 21, 2008·6 cites·18 claims
- 0774US10026911B2Structure for transistor switching speed improvement utilizing polar elastomersCORNING INC·Filed 2017·Granted Jul 17, 2018·2 cites·20 claims
- 0873US8372209B2Ex-situ component recoveryATMEL CORP·Filed 2011·Granted Feb 12, 2013·1 cites·19 claims
- 0972US8530934B2Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related theretoENICKS DARWIN G·Filed 2010·Granted Sep 10, 2013·3 cites·15 claims
- 1072US7550758B2Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulatorATMEL CORP·Filed 2006·Granted Jun 23, 2009·4 cites·21 claims
- 1170US10014177B2Methods for processing electronic devicesCORNING INC·Filed 2013·Granted Jul 3, 2018·2 cites·23 claims
- 1269US7612421B2Electronic device with dopant diffusion barrier and tunable work function and methods of making sameATMEL CORP·Filed 2005·Granted Nov 3, 2009·4 cites·40 claims
- 1369US7300849B2Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancementATMEL CORP·Filed 2005·Granted Nov 27, 2007·4 cites·13 claims
- 1468US8173526B2Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulatorENICKS DARWIN G·Filed 2009·Granted May 8, 2012·3 cites·22 claims
- 1564US7044147B2System, apparatus and method for contaminant reduction in semiconductor device fabrication equipment componentsATMEL CORP·Filed 2004·Granted May 16, 2006·11 cites·80 claims
- 1661US10510576B2Carrier-bonding methods and articles for semiconductor and interposer processingCORNING INC·Filed 2014·Granted Dec 17, 2019·1 cites·13 claims
- 1761US7080440B2Very low moisture o-ring and method for preparing the sameATMEL CORP·Filed 2002·Granted Jul 25, 2006·6 cites·4 claims
- 1859US7651919B2Bandgap and recombination engineered emitter layers for SiGe HBT performance optimizationATMEL CORP·Filed 2005·Granted Jan 26, 2010·2 cites·14 claims
- 1955US7540298B2System, apparatus and method for contaminant reduction in semiconductor device fabrication equipment componentsATMEL CORP·Filed 2006·Granted Jun 2, 2009·2 cites·28 claims
- 2053US2008237716A1Integrated circuit structures having a boron etch-stop layer and methods, devices and systems related theretoATMEL CORP·Filed 2008·Application pending·0 cites
- 2151US9012308B2Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related theretoATMEL CORP·Filed 2013·Granted Apr 21, 2015·0 cites·20 claims
- 2251US8042566B2Ex-situ component recoveryATMEL CORP·Filed 2008·Granted Oct 25, 2011·0 cites·13 claims
- 2349US2006143913A1Very low moisture o-ring and method for preparing the sameATMEL CORP·Filed 2006·Application pending·0 cites
- 2446US10106457B2Vapor deposition systems and processes for the protection of glass sheetsCORNING INC·Filed 2012·Granted Oct 23, 2018·0 cites·8 claims
- 2546US2009151623A1Formation and applications of high-quality epitaxial filmsATMEL CORP·Filed 2007·Application pending·0 cites
- 2645US2009189159A1Gettering layer on substrateATMEL CORP·Filed 2008·Application pending·0 cites
- 2744US2007054460A1System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stopATMEL CORP·Filed 2006·Application pending·0 cites
- 2843US2007262295A1A method for manipulation of oxygen within semiconductor materialsATMEL CORP·Filed 2006·Application pending·0 cites
- 2940US2008050883A1Hetrojunction bipolar transistor (hbt) with periodic multilayer baseATMEL CORP·Filed 2006·Application pending·0 cites
- 3038US8471244B2Method and system for providing a metal oxide semiconductor device having a drift enhanced channelENICKS DARWIN GENE·Filed 2006·Granted Jun 25, 2013·0 cites·17 claims
- 3138US2007148890A1Oxygen enhanced metastable silicon germanium film layerENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 3238US2007102834A1Strain-compensated metastable compound base heterojunction bipolar transistorENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 3337US2008142836A1Method for growth of alloy layers with compositional curvature in a semiconductor deviceENICKS DARWIN GENE·Filed 2006·Application pending·0 cites
- 3435US2006292809A1Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injectionENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 3534US2007102729A1Method and system for providing a heterojunction bipolar transistor having SiGe extensionsENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 3633US2008128749A1Method and system for providing a drift coupled deviceENICKS DARWIN GENE·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →