Inventor · disambiguated record
Darrell M. Erb
Also filed as: ERB DARRELL · ERB DARRELL M
47 granted patents·3 pending applications·1,312 citations·filing 1975–2006
99Inventor score
Top patents by PatentIndex Score
50 records- 0193US6979625B1Copper interconnects with metal capping layer and selective copper alloysADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 27, 2005·68 cites·17 claims
- 0290US6444567B1Process for alloying damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·64 cites·20 claims
- 0390US4093872ACharge coupled device with input for direct injection of signalHUGHES AIRCRAFT CO·Filed 1975·Granted Jun 6, 1978·50 cites·8 claims
- 0488US6455425B1Selective deposition process for passivating top interface of damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 24, 2002·53 cites·18 claims
- 0587US6319834B1Method and apparatus for improved planarity metallization by electroplating and CMPADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 20, 2001·40 cites·18 claims
- 0687US6319819B1Process for passivating top interface of damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 20, 2001·49 cites·18 claims
- 0787US6107186AHigh planarity high-density in-laid metallization patterns by damascene-CMP processingADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 22, 2000·90 cites·19 claims
- 0885US4650544AShallow groove capacitor fabrication methodADVANCED MICRO DEVICES INC·Filed 1985·Granted Mar 17, 1987·70 cites·18 claims
- 0982US6465889B1Silicon carbide barc in dual damascene processingADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·32 cites·20 claims
- 1082US6454916B1Selective electroplating with direct contact chemical polishingADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 24, 2002·13 cites·8 claims
- 1181US7132363B2Stabilizing fluorine etching of low-k materialsADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 7, 2006·28 cites·15 claims
- 1281US7071564B1Composite tantalum capped inlaid copper with reduced electromigration and reduced stress migrationADVANCED MICRO DEVICES INC·Filed 2004·Granted Jul 4, 2006·29 cites·25 claims
- 1381US6831003B1Continuous barrier for interconnect structure formed in porous dielectric material with minimized electromigrationADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 14, 2004·29 cites·14 claims
- 1481US5837618AUniform nonconformal deposition for forming low dielectric constant insulation between certain conductive linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 17, 1998·53 cites·9 claims
- 1577US6727592B1Copper interconnect with improved barrier layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 27, 2004·23 cites·16 claims
- 1677US6689689B1Selective deposition process for allowing damascene-type Cu interconnect linesADVANCED MICRO DEVICES INC·Filed 2000·Granted Feb 10, 2004·26 cites·20 claims
- 1777US4507159AMethod of manufacturing high capacity semiconductor capacitance devicesADVANCED MICRO DEVICES INC·Filed 1981·Granted Mar 26, 1985·28 cites·25 claims
- 1876US5776834ABias plasma deposition for selective low dielectric insulationADVANCED MICRO DEVICES INC·Filed 1995·Granted Jul 7, 1998·45 cites·10 claims
- 1976US5770519ACopper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1995·Granted Jun 23, 1998·49 cites·19 claims
- 2076US5691573AComposite insulation with a dielectric constant of less than 3 in a narrow space separating conductive linesADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 25, 1997·44 cites·14 claims
- 2175US4905065AHigh density dram trench capacitor isolation employing double epitaxial layersADVANCED MICRO DEVICES INC·Filed 1987·Granted Feb 27, 1990·32 cites·14 claims
- 2274US6869878B1Method of forming a selective barrier layer using a sacrificial layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 22, 2005·20 cites·25 claims
- 2374US6140239AChemically removable Cu CMP slurry abrasiveADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·44 cites·10 claims
- 2472US4158238AStratified charge ram having an opposite dopant polarity MOSFET switching circuitERB DARRELL M·Filed 1978·Granted Jun 12, 1979·16 cites·23 claims
- 2571US7146588B1Predicting EM reliability by decoupling extrinsic and intrinsic sigmaADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 5, 2006·14 cites·23 claims
- 2671US4247916AMemory device in which one type carrier stored during write controls the flow of the other type carrier during readERB DARRELL M·Filed 1979·Granted Jan 27, 1981·15 cites·36 claims
- 2770US7157795B1Composite tantalum nitride/tantalum copper capping layerADVANCED MICRO DEVICES INC·Filed 2004·Granted Jan 2, 2007·15 cites·19 claims
- 2868US6500754B1Anneal hillock suppression method in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 31, 2002·16 cites·10 claims
- 2965US6717266B1Use of an alloying element to form a stable oxide layer on the surface of metal featuresADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 6, 2004·12 cites·8 claims
- 3063US4707457AMethod for making improved contact for integrated circuit structureADVANCED MICRO DEVICES INC·Filed 1986·Granted Nov 17, 1987·30 cites·7 claims
- 3161US6756303B1Diffusion barrier and method for its productionADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 29, 2004·9 cites·8 claims
- 3260US6169034B1Chemically removable Cu CMP slurry abrasiveADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 2, 2001·23 cites·15 claims
- 3358US5955786ASemiconductor device using uniform nonconformal deposition for forming low dielectric constant insulation between certain conductive linesADVANCED MICRO DEVICES INC·Filed 1995·Granted Sep 21, 1999·20 cites·20 claims
- 3457US5639691ACopper pellet for reducing electromigration effects associated with a conductive via in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 17, 1997·19 cites·20 claims
- 3556US6383947B1Anti-reflective coating used in the fabrication of microcircuit structures in 0.18 micron and smaller technologiesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 7, 2002·6 cites·10 claims
- 3655US6756306B2Low temperature dielectric deposition to improve copper electromigration performanceADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 29, 2004·4 cites·20 claims
- 3755US6207577B1Self-aligned dual damascene arrangement for metal interconnection with oxide dielectric layer and low k dielectric constant layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 27, 2001·19 cites·13 claims
- 3855US5990557ABias plasma deposition for selective low dielectric insulationADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 23, 1999·18 cites·9 claims
- 3954US6165855AAntireflective coating used in the fabrication of microcircuit structures in 0.18 micron and smaller technologiesADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 26, 2000·13 cites·2 claims
- 4053US6768204B1Self-aligned conductive plugs in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 27, 2004·5 cites·10 claims
- 4152US6048802ASelective nonconformal deposition for forming low dielectric insulation between certain conductive linesADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 11, 2000·15 cites·9 claims
- 4247US2007035025A1Damascene processing using dielectric barrier filmsADVANCED MICRO DEVICES INC·Filed 2006·Application pending·0 cites
- 4346US6380091B1Dual damascene arrangement for metal interconnection with oxide dielectric layer and low K dielectric constant layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 30, 2002·12 cites·26 claims
- 4446US4745454AHigh capacity semiconductor capacitance device structureADVANCED MICRO DEVICES INC·Filed 1986·Granted May 17, 1988·9 cites·11 claims
- 4546US4413402AMethod of manufacturing a buried contact in semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1981·Granted Nov 8, 1983·11 cites·10 claims
- 4645US5212106AOptimizing doping control in short channel MOSADVANCED MICRO DEVICES INC·Filed 1992·Granted May 18, 1993·15 cites·14 claims
- 4740US5646448ACopper pellet for reducing electromigration effects associated with a conductive via in a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 8, 1997·7 cites·16 claims
- 4838US5215937AOptimizing doping control in short channel MOSADVANCED MICRO DEVICES INC·Filed 1992·Granted Jun 1, 1993·10 cites·14 claims
- 4937US2003218253A1Process for formation of a wiring network using a porous interlevel dielectric and related structuresFiled 2001·Application pending·0 cites
- 5036US2003219968A1Sacrificial inlay process for improved integration of porous interlevel dielectricsFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →