Inventor · disambiguated record
David K. Foote
Also filed as: FOOTE DAVID · FOOTE DAVID K · FOOTE DAVID KEATING
42 granted patents·1,399 citations·filing 1995–2014
98Inventor score
Files withADVANCED MICRO DEVICES INC35DIGREGORIO HENRY2FOOTE DAVID K2FAZIO JAMES P1FOOTE DAVID KEATING1
Top patents by PatentIndex Score
42 records- 0197US6537881B1Process for fabricating a non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 25, 2003·208 cites·18 claims
- 0293US5710067ASilicon oxime filmADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 20, 1998·171 cites·101 claims
- 0390US8313455B2Syringes with a reduced susceptibility to freeze-thaw void formation and methods of manufacturing such syringesDIGREGORIO HENRY·Filed 2012·Granted Nov 20, 2012·38 cites·7 claims
- 0490US6562683B1Bit-line oxidation by removing ONO oxide prior to bit-line implantADVANCED MICRO DEVICES INC·Filed 2000·Granted May 13, 2003·49 cites·16 claims
- 0590US6406960B1Process for fabricating an ONO structure having a silicon-rich silicon nitride layerADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 18, 2002·83 cites·6 claims
- 0689US6410388B1Process for optimizing pocket implant profile by RTA implant annealing for a non-volatile semiconductor deviceADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·39 cites·18 claims
- 0788US6218292B1Dual layer bottom anti-reflective coatingADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 17, 2001·93 cites·16 claims
- 0887US6248628B1Method of fabricating an ONO dielectric by nitridation for MNOS memory cellsADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 19, 2001·68 cites·20 claims
- 0986US6528390B2Process for fabricating a non-volatile memory deviceADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 4, 2003·44 cites·16 claims
- 1085US6040619ASemiconductor device including antireflective etch stop layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 21, 2000·67 cites·10 claims
- 1183US8597982B2Methods of fabricating electronics assembliesFOOTE DAVID K·Filed 2011·Granted Dec 3, 2013·9 cites·9 claims
- 1281US6395644B1Process for fabricating a semiconductor device using a silicon-rich silicon nitride ARCADVANCED MICRO DEVICES INC·Filed 2000·Granted May 28, 2002·26 cites·9 claims
- 1380US6458677B1Process for fabricating an ONO structureADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 1, 2002·57 cites·15 claims
- 1477US6436766B1Process for fabricating high density memory cells using a polysilicon hard maskADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 20, 2002·36 cites·22 claims
- 1575US6313018B1Process for fabricating semiconductor device including antireflective etch stop layerADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 6, 2001·20 cites·20 claims
- 1675US6248635B1Process for fabricating a bit-line in a monos device using a dual layer hard maskADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 19, 2001·36 cites·17 claims
- 1774US6297143B1Process for forming a bit-line in a MONOS deviceADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 2, 2001·30 cites·17 claims
- 1874US5963841AGate pattern formation using a bottom anti-reflective coatingADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 5, 1999·45 cites·18 claims
- 1973US5990524ASilicon oxime spacer for preventing over-etching during local interconnect formationADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 23, 1999·40 cites·20 claims
- 2067US9385017B2Apparatus and methods for handling workpieces of different sizesFAZIO JAMES P·Filed 2012·Granted Jul 5, 2016·2 cites·10 claims
- 2166US6114235AMultipurpose cap layer dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 5, 2000·32 cites·6 claims
- 2264US6168993B1Process for fabricating a semiconductor device having a graded junctionADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 2, 2001·11 cites·21 claims
- 2363US5989957AProcess for fabricating semiconductor memory device with high data retention including silicon oxynitride etch stop layer formed at high temperature with low hydrogen ion concentrationADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 23, 1999·27 cites·20 claims
- 2461US8231568B2Syringes with a reduced susceptibility to freeze-thaw void formation and methods of manufacturing such syringesDIGREGORIO HENRY·Filed 2008·Granted Jul 31, 2012·2 cites·14 claims
- 2561US6365320B1Process for forming anti-reflective film for semiconductor fabrication using extremely short wavelength deep ultraviolet photolithographyADVANCED MICRO DEVICES INC·Filed 1999·Granted Apr 2, 2002·24 cites·27 claims
- 2660US6022799AMethods for making a semiconductor device with improved hot carrier lifetimeADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 8, 2000·24 cites·11 claims
- 2758US6399480B1Methods and arrangements for insulating local interconnects for improved alignment tolerance and size reductionADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 4, 2002·7 cites·7 claims
- 2857US6399446B1Process for fabricating high density memory cells using a metallic hard maskADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 4, 2002·21 cites·24 claims
- 2955US8268675B2Passivation layer for semiconductor device packagingFOOTE DAVID KEATING·Filed 2011·Granted Sep 18, 2012·1 cites·11 claims
- 3054US6380588B1Semiconductor device having uniform spacersADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·4 cites·3 claims
- 3153US6121663ALocal interconnects for improved alignment tolerance and size reductionADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 19, 2000·16 cites·10 claims
- 3252US9382623B2Apparatus and method for intraluminal polymer depositionNORDSON CORP·Filed 2014·Granted Jul 5, 2016·0 cites·10 claims
- 3351US10026436B2Apparatus and methods for supporting workpieces during plasma processingFOOTE DAVID K·Filed 2009·Granted Jul 17, 2018·0 cites·9 claims
- 3450US6376308B1Process for fabricating an EEPROM device having a pocket substrate regionADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 23, 2002·4 cites·8 claims
- 3550US6242305B1Process for fabricating a bit-line using buried diffusion isolationADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 5, 2001·10 cites·18 claims
- 3650US6103611AMethods and arrangements for improved spacer formation within a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 15, 2000·13 cites·15 claims
- 3750US5895269AMethods for preventing deleterious punch-through during local interconnect formationADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 20, 1999·15 cites·10 claims
- 3846US6903007B1Process for forming bottom anti-reflection coating for semiconductor fabrication photolithography which inhibits photoresist footingADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 7, 2005·12 cites·23 claims
- 3943US6486029B1Integration of an ion implant hard mask structure into a process for fabricating high density memory cellsADVANCED MICRO DEVICES INC·Filed 2000·Granted Nov 26, 2002·6 cites·19 claims
- 4039US6207502B1Method of using source/drain nitride for periphery field oxide and bit-line oxideADVANCED MICRO DEVICES INC·Filed 1999·Granted Mar 27, 2001·5 cites·17 claims
- 4134US6060393ADeposition control of stop layer and dielectric layer for use in the formation of local interconnectsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·4 cites·12 claims
- 4230US6063665AMethod for silicon surface control for shallow junction formationADVANCED MICRO DEVICES INC·Filed 1997·Granted May 16, 2000·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →