Inventor · disambiguated record
Dae Won Ha
Also filed as: HA DAE WON
56 granted patents·11 pending applications·556 citations·filing 1998–2025
98Inventor score
Top patents by PatentIndex Score
67 records- 0198US7843718B2Non-volatile memory devices including stacked NAND-type resistive memory cell strings and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·238 cites·23 claims
- 0295US11387345B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 12, 2022·3 cites·20 claims
- 0395US10153212B2Semiconductor device including contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 11, 2018·12 cites·10 claims
- 0493US8036018B2Non-volatile memory devices including stacked NAND-type resistive memory cell stringsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 11, 2011·16 cites·20 claims
- 0592US10177148B2Integrated circuit devices and methods of fabricating such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 8, 2019·8 cites·19 claims
- 0691US11139271B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 5, 2021·5 cites·19 claims
- 0791US6451708B1Method of forming contact holes in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 17, 2002·62 cites·12 claims
- 0891US6335233B1Method for fabricating MOS transistorSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 1, 2002·130 cites·10 claims
- 0988US10937887B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·5 cites·19 claims
- 1087US12132044B2Semiconductor device including an upper contact in contact with a side surface of an upper gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 29, 2024·2 cites·15 claims
- 1184US10629742B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·18 claims
- 1284US10529801B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 1383US12261200B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·19 claims
- 1481US12261204B2Semiconductor devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 25, 2025·0 cites·12 claims
- 1581US10978453B2Integrated circuit devices and methods of fabricating such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 13, 2021·2 cites·16 claims
- 1680US11830911B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 28, 2023·0 cites·20 claims
- 1780US11094593B2Semiconductor device including contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 17, 2021·2 cites·15 claims
- 1879US8213223B2Multi-level memory devices and methods of operating the sameKOH GWAN-HYEOB·Filed 2008·Granted Jul 3, 2012·10 cites·14 claims
- 1979US2025344363A1Semiconductor memory devices and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2078US12009346B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 2177US11211497B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 28, 2021·1 cites·19 claims
- 2276US10916534B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·2 cites·20 claims
- 2376US7804703B2Phase change memory device having Schottky diode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 28, 2010·7 cites·18 claims
- 2476US2025022876A1Semiconductor device and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2575US10964782B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 30, 2021·1 cites·20 claims
- 2675US2025194181A1Semiconductor devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2773US11195952B2Semiconductor devices including a stress patternSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 7, 2021·1 cites·20 claims
- 2872US12107139B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 2972US11575002B2Semiconductor device including isolation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·20 claims
- 3071US11973111B2Semiconductor devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 30, 2024·0 cites·20 claims
- 3171US11705435B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 3270US11799013B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 3370US11798850B2Semiconductor device including contact structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·17 claims
- 3469US11894376B2Integrated circuit devices and methods of fabricating such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·19 claims
- 3569US11728430B2Semiconductor devices including a stress patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 3669US7843741B2Memory devices with selective pre-write verification and methods of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·6 cites·20 claims
- 3768US2025185358A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3868US2025191933A1Semiconductor device and a method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3964US12507483B2Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4064US12389584B2Semiconductor memory devices and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·19 claims
- 4164US12243754B2Semiconductor device and a method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·14 claims
- 4264US7871890B2Methods of fabricating semiconductor devices having resistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 18, 2011·2 cites·6 claims
- 4364US2025098180A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4462US12266656B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 1, 2025·0 cites·20 claims
- 4561US8451656B2Multi-level memory devices and methods of operating the sameKOH GWAN-HYEOB·Filed 2012·Granted May 28, 2013·2 cites·18 claims
- 4661US7923810B2Semiconductor devices having active elements with raised semiconductor patterns and related methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·2 cites·20 claims
- 4760US8050083B2Phase change memory device and write method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 1, 2011·4 cites·16 claims
- 4858US8709834B2Methods of fabricating semiconductor deviceHONG SANG-HYUN·Filed 2012·Granted Apr 29, 2014·1 cites·17 claims
- 4957US2024422987A1Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 5056US12396237B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →