Inventor · disambiguated record
Daewon Ha
Also filed as: HA DAEWON
44 granted patents·40 pending applications·198 citations·filing 2009–2025
97Inventor score
Top patents by PatentIndex Score
84 records- 0198US11282839B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 22, 2022·9 cites·20 claims
- 0295US11888044B2Semiconductor devices with stacked transistor structuresSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 30, 2024·4 cites·20 claims
- 0395US8902628B2Resistive memory device and sensing margin trimming method thereofHA DAEWON·Filed 2012·Granted Dec 2, 2014·48 cites·20 claims
- 0494US8102729B2Resistive memory device capable of compensating for variations of bit line resistancesLEE JUNG HYUK·Filed 2010·Granted Jan 24, 2012·28 cites·18 claims
- 0593US9276087B2Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a finSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 1, 2016·14 cites·6 claims
- 0692US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0791US12317580B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 0891US11798947B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 0991US11329066B2Semiconductor devices having multi-channel active regions and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 10, 2022·2 cites·20 claims
- 1088US11798949B2Semiconductor devices having multi-channel active regions and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·11 claims
- 1187US12255206B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 18, 2025·1 cites·20 claims
- 1286US8830728B2Resistance change memory device and current trimming method thereofLEE JUNG HYUK·Filed 2012·Granted Sep 9, 2014·12 cites·16 claims
- 1386US8168479B2Resistance variable memory device and method of fabricating the sameHA DAEWON·Filed 2010·Granted May 1, 2012·13 cites·13 claims
- 1486US7907437B2Resistance variable memory device and method of writing dataSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 15, 2011·19 cites·20 claims
- 1585US9536968B2Semiconductor devices including contact patterns having a rising portion and a recessed portionPARK SUNGIL·Filed 2015·Granted Jan 3, 2017·10 cites·20 claims
- 1684US12183741B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·19 claims
- 1784US11908861B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 20, 2024·1 cites·19 claims
- 1884US11295958B2Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 5, 2022·2 cites·19 claims
- 1984US2024413158A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2083US10804403B2Method of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·3 cites·14 claims
- 2181US10361310B2Method of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 23, 2019·3 cites·18 claims
- 2280US2024429057A1Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2377US2025338565A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2476US11978805B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 7, 2024·0 cites·20 claims
- 2575US12112952B2Methods of forming a semiconductor device including active patterns on a bonding layer and semiconductor devices formed by the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·19 claims
- 2675US8014190B2Resistance variable memory device and method of writing dataSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Sep 6, 2011·5 cites·16 claims
- 2775US2025072041A1Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2875US2025107201A1Selective single diffusion/electrical barrierSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2974US2025294816A1Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3074US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3174US2025248110A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3272US12225703B2Methods of manufacturing a semiconductor device using a maskSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 3372US9208875B2Resistive nonvolatile memory device having cells programmed to achieve a target resistance value at a target time and writing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 8, 2015·4 cites·19 claims
- 3472US2025072107A1Three-dimensional semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3571US9130040B2FinFET semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 8, 2015·3 cites·20 claims
- 3671US2024178229A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3770US12166097B2Semiconductor devices with stacked transistor structuresSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3870US2025098224A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3969US12513996B2Three-dimensional semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 4069US11588054B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 4168US12170333B2Integrated circuit devices having uniformly formed structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 17, 2024·0 cites·19 claims
- 4268US9431522B2Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a finSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 30, 2016·1 cites·16 claims
- 4368US8295076B2Variable resistance memory devices compensating for word line resistanceJEON YOUNG-JOO·Filed 2010·Granted Oct 23, 2012·5 cites·14 claims
- 4468US2025204038A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 4567US12456647B2Nanosheet transistor devices and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·16 claims
- 4667US12199152B2Selective single diffusion/electrical barrierSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 14, 2025·0 cites·8 claims
- 4766US12490494B2Three-dimensional semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 4865US12328909B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 4964US12218133B2Three-dimensional semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 5064US8040720B2Phase-change memory device including biasing circuitSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·5 cites·16 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →