Inventor · disambiguated record
Daniel Arthur Haeger
Also filed as: HAEGER DANIEL A · HAEGER DANIEL ARTHUR
15 granted patents·2 pending applications·110 citations·filing 2010–2021
91Inventor score
Top patents by PatentIndex Score
17 records- 0198US9484492B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2015·Granted Nov 1, 2016·42 cites·20 claims
- 0297US9865772B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2017·Granted Jan 9, 2018·13 cites·18 claims
- 0397US9601659B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2016·Granted Mar 21, 2017·21 cites·19 claims
- 0496US9450147B2LED with internally confined current injection areaLUXVUE TECH CORP·Filed 2014·Granted Sep 20, 2016·16 cites·31 claims
- 0595US10193013B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2017·Granted Jan 29, 2019·10 cites·20 claims
- 0689US11101405B2LED with internally confined current injection areaAPPLE INC·Filed 2020·Granted Aug 24, 2021·2 cites·18 claims
- 0783US10923626B2LED sidewall processing to mitigate non-radiative recombinationAPPLE INC·Filed 2019·Granted Feb 16, 2021·1 cites·17 claims
- 0881US10418519B2LED sidewall processing to mitigate non-radiative recombinationAPPLE INC·Filed 2016·Granted Sep 17, 2019·3 cites·14 claims
- 0976US10446712B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2018·Granted Oct 15, 2019·1 cites·20 claims
- 1075US10593832B2LED with internally confined current injection areaAPPLE INC·Filed 2016·Granted Mar 17, 2020·1 cites·17 claims
- 1174US11978825B2LED with internally confined current injection areaAPPLE INC·Filed 2021·Granted May 7, 2024·0 cites·23 claims
- 1274US10714655B2LED structures for reduced non-radiative sidewall recombinationAPPLE INC·Filed 2019·Granted Jul 14, 2020·0 cites·22 claims
- 1361US11552452B2Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-directionUNIV CALIFORNIA·Filed 2018·Granted Jan 10, 2023·0 cites·21 claims
- 1455US9917422B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-directionUNIV CALIFORNIA·Filed 2015·Granted Mar 13, 2018·0 cites·20 claims
- 1544US9077151B2Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-directionHSU PO SHAN·Filed 2011·Granted Jul 7, 2015·0 cites·28 claims
- 1637US2011170569A1Semipolar iii-nitride laser diodes with etched mirrorsUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
- 1737US2011044364A1STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODESUNIV CALIFORNIA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →