Inventor · disambiguated record
David V. Horak
Also filed as: HORAK DAVID V · HORAK DAVID VAOLAV
11 granted patents·1 pending application·195 citations·filing 1998–2008
90Inventor score
Files withIBM12
Top patents by PatentIndex Score
12 records- 0197US7256415B2Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cellsIBM·Filed 2005·Granted Aug 14, 2007·49 cites·10 claims
- 0295US7057923B2Field emission phase change diode memoryIBM·Filed 2003·Granted Jun 6, 2006·86 cites·30 claims
- 0375US7250347B2Double-gate FETs (Field Effect Transistors)IBM·Filed 2005·Granted Jul 31, 2007·6 cites·20 claims
- 0473US7378678B2Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cellsIBM·Filed 2007·Granted May 27, 2008·3 cites·14 claims
- 0572US7820502B2Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed therebyIBM·Filed 2007·Granted Oct 26, 2010·3 cites·13 claims
- 0670US7932167B2Phase change memory cell with vertical transistorIBM·Filed 2007·Granted Apr 26, 2011·7 cites·18 claims
- 0755US7541608B2Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cellsIBM·Filed 2008·Granted Jun 2, 2009·0 cites·6 claims
- 0854US6420766B1Transistor having raised source and drainIBM·Filed 1999·Granted Jul 16, 2002·18 cites·12 claims
- 0954US6100013AMethod for forming transistors with raised source and drains and device formed therebyIBM·Filed 1998·Granted Aug 8, 2000·14 cites·20 claims
- 1052US7834384B2Simultaneous conditioning of a plurality of memory cells through series resistorsIBM·Filed 2008·Granted Nov 16, 2010·0 cites·17 claims
- 1148US6255178B1Method for forming transistors with raised source and drains and device formed therebyIBM·Filed 1999·Granted Jul 3, 2001·9 cites·22 claims
- 1245US2007235811A1Simultaneous conditioning of a plurality of memory cells through series resistorsIBM·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →