Inventor · disambiguated record
David K. Hwang
Also filed as: HWANG DAVID · HWANG DAVID K · HWANG DAVID KOU-FONG
40 granted patents·8 pending applications·302 citations·filing 1991–2024
98Inventor score
Files withMICRON TECHNOLOGY INC33PAREKH KUNAL2WILSON AARON R2BUSCH BRETT W1CHENG SHIN RUBBER IND CO LTD1
Top patents by PatentIndex Score
48 records- 0193US7687342B2Method of manufacturing a memory deviceMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 30, 2010·22 cites·14 claims
- 0292US8716116B2Method of forming a DRAM array of devices with vertically integrated recessed access device and digitlinePAREKH KUNAL·Filed 2010·Granted May 6, 2014·27 cites·23 claims
- 0391US7696568B2Semiconductor device having reduced sub-threshold leakageMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 13, 2010·18 cites·9 claims
- 0490US5475601AControl for glassware forming system including bidirectional network gatewayEMHART GLASS MACH INVEST·Filed 1994·Granted Dec 12, 1995·47 cites·1 claims
- 0589US7879659B2Methods of fabricating semiconductor devices including dual fin structuresMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 1, 2011·14 cites·34 claims
- 0688US8497541B2Memory having buried digit lines and methods of making the samePAREKH KUNAL·Filed 2010·Granted Jul 30, 2013·11 cites·36 claims
- 0788US7563723B2Critical dimension control for integrated circuitsMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 21, 2009·11 cites·18 claims
- 0887US9219001B2Methods of forming semiconductor devices having recessesMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 22, 2015·6 cites·19 claims
- 0985US7897465B2Semiconductor device having reduced sub-threshold leakageMICRON TECHNOLOGY INC·Filed 2010·Granted Mar 1, 2011·6 cites·15 claims
- 1085USD343660SCombined dumbbell and containerHWANG DAVID·Filed 1992·Granted Jan 25, 1994·35 cites·1 claims
- 1183US8138526B2Semiconductor structures including dual finsWILSON AARON R·Filed 2010·Granted Mar 20, 2012·5 cites·17 claims
- 1282US7910971B2Methods of forming vertical field effect transistors, vertical field effect transistors, and dram cellsMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 22, 2011·8 cites·35 claims
- 1381US7341906B2Method of manufacturing sidewall spacers on a memory device, and device comprising sameMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 11, 2008·6 cites·31 claims
- 1480US7648915B2Methods of forming semiconductor constructions, and methods of recessing materials within openingsMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 19, 2010·5 cites·52 claims
- 1580US7601591B2Method of manufacturing sidewall spacers on a memory device, and device comprising sameMICRON TECHNOLOGY INC·Filed 2008·Granted Oct 13, 2009·5 cites·17 claims
- 1678US8178911B2Semiconductor device having reduced sub-threshold leakageHWANG DAVID K·Filed 2011·Granted May 15, 2012·5 cites·15 claims
- 1778US7271106B2Critical dimension control for integrated circuitsMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 18, 2007·17 cites·28 claims
- 1877US9041086B2Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cellsLINDHOLM LARSON·Filed 2012·Granted May 26, 2015·5 cites·14 claims
- 1977US8022473B2Semiconductor device having reduced sub-threshold leakageMICRON TECHNOLOGY INC·Filed 2011·Granted Sep 20, 2011·3 cites·19 claims
- 2076US7459742B2Method of manufacturing sidewall spacers on a memory device, and device comprising sameMICRON TECHNOLOGY INC·Filed 2006·Granted Dec 2, 2008·4 cites·9 claims
- 2175US8030168B2Methods of forming DRAM memory cellsMICRON TECHNOLOGY INC·Filed 2009·Granted Oct 4, 2011·4 cites·31 claims
- 2271US7935999B2Memory deviceMICRON TECHNOLOGY INC·Filed 2010·Granted May 3, 2011·2 cites·31 claims
- 2371US2024121943A1Integrated Assemblies and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2470US2023395723A1Integrated Assemblies and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 2567US11670707B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 6, 2023·0 cites·20 claims
- 2666US11393920B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 19, 2022·0 cites·28 claims
- 2765US8497530B2Semiconductor structures including dual finsWILSON AARON R·Filed 2012·Granted Jul 30, 2013·1 cites·13 claims
- 2864US8211763B2Methods of forming vertical field effect transistors, vertical field effect transistors, and DRAM cellsLINDHOLM LARSON D·Filed 2011·Granted Jul 3, 2012·2 cites·11 claims
- 2962US11889680B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 30, 2024·0 cites·44 claims
- 3062US2025040121A1Multi-layer capacitors for three-dimensional memory systemsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3160US11777036B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 3, 2023·0 cites·26 claims
- 3259US7808041B2Semiconductor constructions of memory device with different depth gate line trenchesMICRON TECHNOLOGY INC·Filed 2009·Granted Oct 5, 2010·0 cites·11 claims
- 3358US7329910B2Semiconductor substrates and field effect transistor constructionsMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 12, 2008·1 cites·19 claims
- 3458US2025056828A1Vertically-arranged gate all around transistors having uniform cell contact lightly-doped drain regionsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3551US9263095B2Memory having buried digit lines and methods of making the sameMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 16, 2016·0 cites·23 claims
- 3651US7948030B2Semiconductor constructions of memory devices with different sizes of GateLine trenchesMICRON TECHNOLOGY INC·Filed 2010·Granted May 24, 2011·0 cites·11 claims
- 3751US2024064962A1Doped dielectric materialMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 3849US8691656B2Methods of forming an interconnect between a substrate bit line contact and a bit line in DRAMBUSCH BRETT W·Filed 2011·Granted Apr 8, 2014·0 cites·15 claims
- 3948US2023397391A1Support structure for multiple, alternating epitaxial siliconMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 4048US2014231894A1Method of forming a dram array of devices with vertically integrated recessed access device and digitlineMICRON TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 4145US5186952AMold for manufacturing tiresCHENG SHIN RUBBER IND CO LTD·Filed 1991·Granted Feb 16, 1993·9 cites·4 claims
- 4244US5950096AProcess for improving device yield in integrated circuit fabricationLUCENT TECHNOLOGIES INC·Filed 1997·Granted Sep 7, 1999·12 cites·18 claims
- 4344US2006263974A1Methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memory cellMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 4442US7277278B2Hinged panel and disc drive for a computerTHERMALTAKE INC·Filed 2004·Granted Oct 2, 2007·1 cites·24 claims
- 4541US10643906B2Methods of forming a transistor and methods of forming an array of memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted May 5, 2020·0 cites·21 claims
- 4638US7081416B2Methods of forming field effect transistor gatesMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 25, 2006·0 cites·44 claims
- 4737US6085552AAligning fixture for mold opening and closing mechanismEMHART GLASS SA·Filed 1999·Granted Jul 11, 2000·7 cites·3 claims
- 4832US5545244AControl for glass forming machineEMHART INC·Filed 1994·Granted Aug 13, 1996·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →