Inventor · disambiguated record
Daisuke Ikeno
Also filed as: IKENO DAISUKE
30 granted patents·14 pending applications·277 citations·filing 2009–2024
96Inventor score
Top patents by PatentIndex Score
44 records- 0198US9406694B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Aug 2, 2016·94 cites·12 claims
- 0297US9570464B1Method for manufacturing semiconductor deviceTOSHIBA KK·Filed 2016·Granted Feb 14, 2017·31 cites·20 claims
- 0396US8604573B2Semiconductor memory deviceYAMAKAWA KOJI·Filed 2012·Granted Dec 10, 2013·45 cites·11 claims
- 0495US8587043B2Magnetoresistive random access memory and method of manufacturing the sameNATORI KATSUAKI·Filed 2011·Granted Nov 19, 2013·46 cites·8 claims
- 0588US9673217B1Semiconductor device and method for manufacturing sameTOSHIBA KK·Filed 2016·Granted Jun 6, 2017·6 cites·6 claims
- 0687US8188547B2Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodesMANABE KENZO·Filed 2010·Granted May 29, 2012·12 cites·18 claims
- 0786US9780111B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Oct 3, 2017·5 cites·13 claims
- 0886US9178137B2Magnetoresistive element and magnetic memoryEEH YOUNGMIN·Filed 2013·Granted Nov 3, 2015·8 cites·12 claims
- 0981US10566280B2Semiconductor device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Feb 18, 2020·3 cites·20 claims
- 1079US8982614B2Magnetoresistive effect element and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Mar 17, 2015·3 cites·11 claims
- 1178US9196823B2Magnetoresistive effect elementTOSHIBA KK·Filed 2013·Granted Nov 24, 2015·6 cites·16 claims
- 1278US8653614B2Semiconductor memory device and method for manufacturing the sameIKENO DAISUKE·Filed 2012·Granted Feb 18, 2014·6 cites·10 claims
- 1375US9905462B2Semiconductor device and method for manufacturing the sameTOSHIBA MEMORY CORP·Filed 2015·Granted Feb 27, 2018·2 cites·6 claims
- 1473US9911753B2Semiconductor device and method for manufacturing semiconductor deviceTOSHIBA MEMORY CORP·Filed 2016·Granted Mar 6, 2018·2 cites·9 claims
- 1569US12446223B2Semiconductor storage device and method for manufacturing semiconductor storage deviceKIOXIA CORP·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1669US8710604B2Magnetoresistive element and manufacturing method of the sameYAMAKAWA KOJI·Filed 2012·Granted Apr 29, 2014·3 cites·3 claims
- 1767US10269825B2Semiconductor device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2016·Granted Apr 23, 2019·1 cites·13 claims
- 1865US9779978B2Method of manufacturing semiconductor device and semiconductor manufacturing apparatusTOSHIBA KK·Filed 2015·Granted Oct 3, 2017·1 cites·16 claims
- 1963US8410529B2Magnetic random access memory and method of fabricating the sameIKENO DAISUKE·Filed 2011·Granted Apr 2, 2013·1 cites·19 claims
- 2062US12408340B2Memory device including a conductive film with interfacial roughnessKIOXIA CORP·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
- 2160US2025089342A1Semiconductor device and method for manufacturing semiconductor deviceKIOXIA CORP·Filed 2024·Application pending·0 cites
- 2258US2024081073A1Semiconductor deviceKIOXIA CORP·Filed 2023·Application pending·0 cites
- 2357US8741161B2Method of manufacturing semiconductor deviceSONODA YASUYUKI·Filed 2012·Granted Jun 3, 2014·1 cites·16 claims
- 2457US2024098981A1Semiconductor deviceKIOXIA CORP·Filed 2023·Application pending·0 cites
- 2556US9231192B2Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2014·Granted Jan 5, 2016·1 cites·12 claims
- 2655US2024268117A1Semiconductor device and method for manufacturing sameKIOXIA CORP·Filed 2024·Application pending·0 cites
- 2754US11527478B2Semiconductor device, semiconductor memory device, and semiconductor device manufacturing methodKIOXIA CORP·Filed 2020·Granted Dec 13, 2022·0 cites·15 claims
- 2854US11227934B2Semiconductor device and method for manufacturing the sameKIOXIA CORP·Filed 2020·Granted Jan 18, 2022·0 cites·18 claims
- 2954US9070866B2Magnetoresistive effect element and manufacturing method thereofTOSHIBA KK·Filed 2013·Granted Jun 30, 2015·0 cites·6 claims
- 3054US2024098997A1Semiconductor device and method for manufacturing the sameKIOXIA CORP·Filed 2023·Application pending·0 cites
- 3153US11990417B2Semiconductor memory device with different fluorine concentrations in sub conductive layersKIOXIA CORP·Filed 2021·Granted May 21, 2024·0 cites·10 claims
- 3252US11605643B2Semiconductor memory device and manufacturing method thereofKIOXIA CORP·Filed 2021·Granted Mar 14, 2023·0 cites·14 claims
- 3351US2022406710A1Semiconductor device and manufacturing method thereofKIOXIA CORP·Filed 2022·Application pending·0 cites
- 3450US10833265B2Storage deviceTOSHIBA MEMORY CORP·Filed 2019·Granted Nov 10, 2020·0 cites·13 claims
- 3548US2013001715A1Magnetoresistive element and manufacturing method of the sameTOSHIBA KK·Filed 2012·Application pending·0 cites
- 3643US2010065918A1Semiconductor device and method for manufacturing the sameIKENO DAISUKE·Filed 2009·Application pending·0 cites
- 3736US8878320B2Semiconductor memory deviceYAMAKAWA KOJI·Filed 2012·Granted Nov 4, 2014·0 cites·20 claims
- 3834US8198155B2Semiconductor device and method of manufacturing the sameIKENO DAISUKE·Filed 2010·Granted Jun 12, 2012·0 cites·15 claims
- 3934US2016064405A1Method for forming insulator film on metal filmTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4034US2011215413A1Semiconductor device and method for manufacturing the sameIKENO DAISUKE·Filed 2011·Application pending·0 cites
- 4134US2016268283A1Semiconductor memory device and method for manufacturing sameTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4233US2012112297A1Magnetic random access memory and method of fabricating the sameYAMAKAWA KOJI·Filed 2011·Application pending·0 cites
- 4333US2016071942A1Semiconductor memoryTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4433US2010176456A1Semiconductor device and method for manufacturing the sameIKENO DAISUKE·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →