Inventor · disambiguated record
Daniel Kadosh
Also filed as: KADOSH DANIEL
114 granted patents·4 pending applications·3,960 citations·filing 1996–2007
99Inventor score
Top patents by PatentIndex Score
118 records- 0198US6080640AMetal attachment method and structure for attaching substrates at low temperaturesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 27, 2000·291 cites·17 claims
- 0298US6075268AUltra high density inverter using a stacked transistor arrangementADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 13, 2000·256 cites·11 claims
- 0397US5770483AMulti-level transistor fabrication method with high performance drain-to-gate connectionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 23, 1998·256 cites·18 claims
- 0493US6506642B1Removable spacer techniqueADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 14, 2003·74 cites·19 claims
- 0592US7198964B1Method and apparatus for detecting faults using principal component analysis parameter groupingsADVANCED MICRO DEVICES INC·Filed 2004·Granted Apr 3, 2007·64 cites·38 claims
- 0692US6097096AMetal attachment method and structure for attaching substrates at low temperaturesADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 1, 2000·116 cites·9 claims
- 0792US5885877AComposite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·107 cites·27 claims
- 0891US7248939B1Method and apparatus for multivariate fault detection and classificationADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 24, 2007·21 cites·23 claims
- 0991US6355955B1Transistor and a method for forming the transistor with elevated and/or relatively shallow source/drain regions to achieve enhanced gate electrode formationADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 12, 2002·64 cites·8 claims
- 1090US5981354ASemiconductor fabrication employing a flowable oxide to enhance planarization in a shallow trench isolation processADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 9, 1999·110 cites·11 claims
- 1190US5869379AMethod of forming air gap spacer for high performance MOSFETS'ADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 9, 1999·73 cites·12 claims
- 1289US6764908B1Narrow width CMOS devices fabricated on strained lattice semiconductor substrates with maximized NMOS and PMOS drive currentsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 20, 2004·50 cites·20 claims
- 1389US6589847B1Tilted counter-doped implant to sharpen halo profileADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 8, 2003·47 cites·80 claims
- 1486US6069398AThin film resistor and fabrication method thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted May 30, 2000·67 cites·19 claims
- 1586US5677224AMethod of making asymmetrical N-channel and P-channel devicesADVANCED MICRO DEVICES INC·Filed 1996·Granted Oct 14, 1997·52 cites·20 claims
- 1685US5949092AUltra-high-density pass gate using dual stacked transistors having a gate structure with planarized upper surface in relation to interlayer insulatorADVANCED MICRO DEVICES INC·Filed 1997·Granted Sep 7, 1999·62 cites·29 claims
- 1785US5933721AMethod for fabricating differential threshold voltage transistor pairADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 3, 1999·64 cites·31 claims
- 1885US5714394AMethod of making an ultra high density NAND gate using a stacked transistor arrangementADVANCED MICRO DEVICES INC·Filed 1996·Granted Feb 3, 1998·64 cites·9 claims
- 1984US7650199B1End of line performance predictionKADOSH DANIEL·Filed 2005·Granted Jan 19, 2010·16 cites·33 claims
- 2084US6225151B1Nitrogen liner beneath transistor source/drain regions to retard dopant diffusionADVANCED MICRO DEVICES INC·Filed 1997·Granted May 1, 2001·68 cites·37 claims
- 2183US6172381B1Source/drain junction areas self aligned between a sidewall spacer and an etched lateral sidewallADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 9, 2001·61 cites·7 claims
- 2283US5866934AParallel and series-coupled transistors having gate conductors formed on sidewall surfaces of a sacrificial structureADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 2, 1999·45 cites·12 claims
- 2381US6037629ATrench transistor and isolation trenchADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 14, 2000·53 cites·41 claims
- 2480US5959337AAir gap spacer formation for high performance MOSFETsADVANCED MICRO DEVICES INC·Filed 1998·Granted Sep 28, 1999·37 cites·8 claims
- 2580US5937301AMethod of making a semiconductor device having sidewall spacers with improved profilesADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·55 cites·22 claims
- 2680US5874341AMethod of forming trench transistor with source contact in trenchADVANCED MICRO DEVICES INC·Filed 1996·Granted Feb 23, 1999·40 cites·30 claims
- 2779US6358828B1Ultra high density series-connected transistors formed on separate elevational levelsADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 19, 2002·38 cites·11 claims
- 2879US6078080AAsymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source regionADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 20, 2000·37 cites·18 claims
- 2979US5852310AMulti-level transistor fabrication method with a patterned upper transistor substrate and interconnection theretoADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 22, 1998·48 cites·9 claims
- 3079US5818069AUltra high density series-connected transistors formed on separate elevational levelsADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 6, 1998·36 cites·10 claims
- 3178US5808319ALocalized semiconductor substrate for multilevel transistorsADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 15, 1998·34 cites·6 claims
- 3278US5789787AAsymmetrical N-channel and P-channel devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 4, 1998·33 cites·24 claims
- 3377US6949436B2Composite spacer liner for improved transistor performanceADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 27, 2005·19 cites·8 claims
- 3477US6259118B1Ultra high density NOR gate using a stacked transistor arrangementADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·36 cites·14 claims
- 3577US6140163AMethod and apparatus for upper level substrate isolation integrated with bulk siliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 31, 2000·40 cites·20 claims
- 3677US6040220AAsymmetrical transistor formed from a gate conductor of unequal thicknessADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 21, 2000·41 cites·12 claims
- 3777US6027978AMethod of making an IGFET with a non-uniform lateral doping profile in the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 22, 2000·40 cites·44 claims
- 3877US5759897AMethod of making an asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source regionADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 2, 1998·35 cites·18 claims
- 3977US5656518AMethod for fabrication of a non-symmetrical transistorADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 12, 1997·39 cites·28 claims
- 4076US6261885B1Method for forming integrated circuit gate conductors from dual layers of polysiliconADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 17, 2001·18 cites·15 claims
- 4176US5985724AMethod for forming asymmetrical p-channel transistor having nitrided oxide patterned to selectively form a sidewall spacerADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 16, 1999·34 cites·10 claims
- 4276US5912188AMethod of forming a contact hole in an interlevel dielectric layer using dual etch stopsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 15, 1999·49 cites·30 claims
- 4375US6232637B1Semiconductor fabrication having multi-level transistors and high density interconnect therebetweenADVANCED MICRO DEVICES INC·Filed 1999·Granted May 15, 2001·30 cites·15 claims
- 4475US6096591AMethod of making an IGFET and a protected resistor with reduced processing stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 1, 2000·36 cites·39 claims
- 4575US5780340AMethod of forming trench transistor and isolation trenchADVANCED MICRO DEVICES INC·Filed 1996·Granted Jul 14, 1998·40 cites·25 claims
- 4674US5872029AMethod for forming an ultra high density inverter using a stacked transistor arrangementADVANCED MICRO DEVICES INC·Filed 1996·Granted Feb 16, 1999·30 cites·10 claims
- 4773US7315765B1Automated control thread determination based upon post-process considerationADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 1, 2008·10 cites·36 claims
- 4872US6005272ATrench transistor with source contact in trenchADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 21, 1999·26 cites·31 claims
- 4972US5923982AMethod of making asymmetrical transistor with lightly and heavily doped drain regions and ultra-heavily doped source region using two source/drain implant stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 13, 1999·32 cites·36 claims
- 5071US5970375ASemiconductor fabrication employing a local interconnectADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 19, 1999·40 cites·13 claims
Showing the top 50 of 118 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →